DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BCP51; BCP52; BCP53
PNP medium power transistors
Product specification
Supersedes data of 1997 Apr 08
1999 Apr 08
Philips Semiconductors
Product specification
PNP medium power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V)
•
Medium power (max. 1.3 W).
APPLICATIONS
•
Audio, telephony and automotive applications
•
Thick and thin-film circuits.
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BCP54, BCP55 and BCP56.
1
Top view
handbook, halfpage
BCP51; BCP52; BCP53
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
4
2, 4
1
3
2
3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BCP51
BCP52
BCP53
V
CEO
collector-emitter voltage
BCP51
BCP52
BCP53
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−
−65
−
−65
−45
−60
−80
−5
−1
−1.5
−0.2
1.3
+150
150
+150
V
V
V
V
A
A
A
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−
−45
−60
−100
V
V
V
MIN.
MAX.
UNIT
1999 Apr 08
2
Philips Semiconductors
Product specification
PNP medium power transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BCP51; BCP52; BCP53
CONDITIONS
note 1
VALUE
95
14
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 125
°C
I
C
= 0; V
EB
=
−5
V
V
CE
=
−2
V; see Fig.2
I
C
=
−5
mA
I
C
=
−150
mA
I
C
=
−500
mA
h
FE
DC current gain
BCP53-10
BCP51-16; BCP52-16; BCP53-16
V
CEsat
V
BE
f
T
collector-emitter saturation voltage
base-emitter voltage
transition frequency
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−500
mA; V
CE
=
−2
V
I
C
=
−10
mA; V
CE
=
−5
V;
f = 100 MHz
I
C
= 150 mA; V
CE
=
−2
V; see Fig.2
63
100
−
−
−
−
−
−
−
115
160
250
−0.5
−1
−
V
V
MHz
40
63
25
−
−
−
−
250
−
MIN.
−
−
−
TYP. MAX. UNIT
−
−
−
−100
−10
−100
nA
µA
nA
1999 Apr 08
3
Philips Semiconductors
Product specification
PNP medium power transistors
BCP51; BCP52; BCP53
handbook, full pagewidth
160
MBH730
hFE
120
VCE =
−2
V
80
40
0
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
−10
4
Fig.2 DC current gain; typical values.
1999 Apr 08
4
Philips Semiconductors
Product specification
PNP medium power transistors
PACKAGE OUTLINE
BCP51; BCP52; BCP53
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28
1999 Apr 08
5
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