HS-508BRH
Data Sheet
December 1999
File Number
4824
Radiation Hardened 8 Channel CMOS
Analog Multiplexer with Overvoltage
Protection
The HS-508BRH is a dielectrically isolated, radiation
hardened, CMOS analog multiplexer incorporating an
important feature; it withstands analog input voltages much
greater than the supplies. This is essential in any system
where the analog inputs originate outside the equipment.
They can withstand a continuous input up to 10V greater than
either supply, which eliminates the possibility of damage when
supplies are off, but input signals are present. Equally
important, it can withstand brief input transient spikes of
several hundred volts; which otherwise would require complex
external protection networks. Necessarily, ON resistance is
somewhat higher than similar unprotected devices, but very
low leakage current combine to produce low errors.
Reference Application Notes 520 and 521 for further
information on the HS-508BRH multiplexer in general.
The HS-508BRH has been specifically designed to meet
exposure to radiation environments. Operation from -55
o
C to
125
o
C is guaranteed.
Features
• Electrically Screened to SMD # 5962-96742
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 10
5
RAD(Si)
- Dielectrically Isolated Device Islands
- SEP >100 Mev-mg/cm
2
• Analog/Digital Overvoltage Protection
• ESD Rated to 3KV
• Fail Safe with Power Loss (No Latchup)
• Break-Before-Make Switching
• DTL/TTL and CMOS Compatible
• Analog Signal Range
. . . . . . . . . . . . . . . . . . . . . . . . . . . .±15V
• Fast Access Time
• Supply Current at 1MHz Address Toggle . . . . . .4mA (Typ)
• Standby Power . . . . . . . . . . . . . . . . . . . . . . . .7.5mW (Typ)
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-96742. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Ordering Information
ORDERING NUMBER
5962R9674202QEC
5962R9674202QXC
5962R9674202VEC
5962R9674202VXC
INTERNAL
MKT. NUMBER
HS1-508BRH-8
HS9-508BRH-8
HS1-508BRH-Q
HS9-508BRH-Q
TEMP.
RANGE (
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
HS1-508BRH/PROTO HS1-508BRH/PROTO
HS9-508BRH/PROTO HS9-508BRH/PROTO
Pinouts
HS1-508BRH 16 LEAD SIDEBRAZE DIP
MIL-STD-1835, CDIP2-T16
TOP VIEW
AO 1
EN 2
-VSUP 3
IN 1 4
IN 2 5
IN 3 6
IN 4 7
OUT 8
16 A1
15 A2
14 GND
13 +VSUP
12 IN 5
11 IN 6
10 IN 7
9 IN 8
A0
EN
-VSUP
IN1
IN2
IN3
IN4
OUT
HS9-508BRH 16 LEAD FLATPACK
MIL-STD-1835, CDFP4-F16
TOP VIEW
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
A1
A2
GND
+VSUP
IN5
IN6
IN7
IN8
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 1999
HS-508BRH
Die Characteristics
DIE DIMENSIONS:
120 mils x 93 mils x 19 mils
INTERFACE MATERIALS:
Glassivation:
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8k
Å
±1k
Å
Top Metallization:
Type: AlSiCu
Thickness: 16k
Å
±2k
Å
Substrate:
Rad Hard Silicon Gate
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
6.68e04 A/cm
2
Transistor Count:
506
Metallization Mask Layout
HS-508BRH
IN2
IN1
-V
IN3
EN
IN4
OUT
A0
IN8
A1
IN7
A2
IN6
IN5
+V
GND
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
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