18A, 600V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3
| Parameter Name | Attribute value |
| Maker | SEMELAB |
| package instruction | SMALL OUTLINE, R-PSSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 1210 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 600 V |
| Maximum drain current (ID) | 18 A |
| Maximum drain-source on-resistance | 0.35 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 72 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| SML6035SVR | |
|---|---|
| Description | 18A, 600V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3 |
| Maker | SEMELAB |
| package instruction | SMALL OUTLINE, R-PSSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 1210 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 600 V |
| Maximum drain current (ID) | 18 A |
| Maximum drain-source on-resistance | 0.35 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 72 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |