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SML6035SVR

Description
18A, 600V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3
CategoryDiscrete semiconductor    The transistor   
File Size81KB,2 Pages
ManufacturerSEMELAB
Download Datasheet Parametric Compare View All

SML6035SVR Overview

18A, 600V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3

SML6035SVR Parametric

Parameter NameAttribute value
MakerSEMELAB
package instructionSMALL OUTLINE, R-PSSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1210 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)18 A
Maximum drain-source on-resistance0.35 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)72 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

SML6035SVR Related Products

SML6035SVR
Description 18A, 600V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3
Maker SEMELAB
package instruction SMALL OUTLINE, R-PSSO-G3
Contacts 3
Reach Compliance Code unknow
ECCN code EAR99
Avalanche Energy Efficiency Rating (Eas) 1210 mJ
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V
Maximum drain current (ID) 18 A
Maximum drain-source on-resistance 0.35 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G3
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type N-CHANNEL
Maximum pulsed drain current (IDM) 72 A
Certification status Not Qualified
surface mount YES
Terminal form GULL WING
Terminal location SINGLE
transistor applications SWITCHING
Transistor component materials SILICON
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