®
STF2222A
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
Type
STF2222A
s
Marking
20F
s
s
s
SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
MINIATURE SOT-89 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
TAPE & REEL PACKING
THE PNP COMPLEMENTARY TYPE IS
STF2907A
SOT-89
APPLICATIONS
s
WELL SUITABLE FOR PORTABLE
EQUIPMENT
s
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Total Dissipation at T
amb
= 25 C
Storage Temperature
Max. Operating Junction Temperature
o
Value
75
40
6
0.6
0.8
1.2
-65 to 150
150
Unit
V
V
V
A
A
W
o
o
C
C
February 2003
1/5
STF2222A
THERMAL DATA
R
thj-amb
•
Thermal Resistance Junction-Ambient
2
Max
104.1
o
C/W
•
Device mounted on a PCB area of 1 cm .
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CEX
I
BEX
I
CBO
I
EBO
Parameter
Collector Cut-off
Current (V
BE
= -3 V)
Base Cut-off Current
(V
BE
= -3 V)
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= 60 V
V
CE
= 60 V
V
CB
= 75 V
V
CB
= 75 V
V
EB
= 3 V
I
C
= 10 mA
40
Min.
Typ.
Max.
10
20
10
10
15
Unit
nA
nA
nA
µA
nA
V
T
j
= 150 C
o
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Collector-Base
Saturation Voltage
DC Current Gain
I
C
= 10
µA
75
V
V
(BR)EBO
I
E
= 10
µA
6
V
V
CE(sat)
∗
V
BE(sat)
∗
h
FE
∗
I
C
= 150 mA
I
C
= 500 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
=
0.1 mA
1 mA
10 mA
150 mA
150 mA
500 mA
I
B
= 15 mA
I
B
= 50 mA
I
B
= 15 mA
I
B
= 50 mA
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 1 V
V
CE
= 10 V
f = 1 MHz
f = 1MHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
50
75
5
25
2
0.25
0.6
35
50
75
100
50
40
270
4
20
4
0.3
1
1.2
2
V
V
V
V
300
f
T
C
CBO
C
EBO
NF
h
ie
∗
h
re
∗
Transition Frequency
Collector-Base
Capacitance
Emitter-Base
Capacitance
Noise Figure
Input Impedance
Reverse Voltage Ratio
I
C
= 20 mA V
CE
= 20V f = 100MHz
I
E
= 0
I
C
= 0
V
CB
= 10 V
V
EB
= 0.5 V
MHz
8
25
pF
pF
dB
8
1.25
8
4
300
375
35
200
µS
µS
KΩ
KΩ
10
-4
10
-4
I
C
= 0.1 mA V
CE
= 10 V
∆f
= 200 Hz R
G
= 1 KΩ
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
I
C
= 1 mA
I
C
= 10 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 1 mA
I
C
= 10 mA
h
fe
∗
h
oe
∗
Small Signal Current
Gain
Output Admittance
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
2/5
STF2222A
ELECTRICAL CHARACTERISTICS
(Continued)
Symbol
t
d
t
r
t
s
t
f
Parameter
Delay Time
Rise Time
Storage Time
Fall Time
Test Conditions
I
C
= 150 mA
V
CC
= 30 V
I
C
= 150 mA
V
CC
= 30 V
I
B
= 15 mA
I
B1
= - I
B2
= 15 mA
Min.
Typ.
5
12
185
24
Max.
10
25
225
60
Unit
ns
ns
ns
ns
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
3/5
STF2222A
SOT-89 MECHANICAL DATA
mm
MIN.
A
B
B1
C
C1
D
D1
E
e
e1
H
L
1.4
0.44
0.36
0.35
0.35
4.4
1.62
2.29
1.42
2.92
3.94
0.89
TYP.
MAX.
1.6
0.56
0.48
0.44
0.44
4.6
1.83
2.6
1.57
3.07
4.25
1.2
MIN.
55.1
17.3
14.2
13.8
13.8
173.2
63.8
90.2
55.9
115.0
155.1
35.0
mils
TYP.
MAX.
63.0
22.0
18.9
17.3
17.3
181.1
72.0
102.4
61.8
120.9
167.3
47.2
DIM.
P025H
4/5
STF2222A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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