3N212 datasheet, PDF - EEWORLD Datasheet

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3N212: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size17KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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3N212 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

3N212 Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	,
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	Single
Maximum drain current (Abs) (ID)	0.05 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature	200 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.36 W
surface mount	NO

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3N212

DUAL GATE MOSFET

N-CHANNEL DEPLETION MODE

DESCRIPTION:

The

ASI 3N212

is a Dual Gate Mosfet

Designed for Low Noise Mixer

Applications in VHF Receivers.

FEATURES:

•

Integrated Gate Protection

•

High Conversion Gain

PACKAGE STYLE TO-72

MAXIMUM RATINGS

DISS

STG

50 mA

27 V

35 V

1.2 W @ T

= 25 C

-65 C to +165 C

125 C/W

1 = DRAIN

2 = GATE #2

3 = GATE #1

4 = CASE / SOURCE / SUBSTRATE

STATIC CHARACTERISTICS

SYMBOL

(BR)DSX

(BR)G1SO

(BR)G2SO

G1SS

G2SS

DSS

G1S(OFF)

G2S(OFF)

rss

= 10

µA

±10

G1S

±5.0

= 25 C

NONE

TEST CONDITIONS

G1S

= V

G2S

= -4.0 V

G2S

= V

= 0 V

G1S

= V

= 0 V

G2S

= V

= 0 V

= 150 C

G2S

±5.0

G1S

= V

= 0 V

= 150 C

= 15 V

G1S

= 0 V

G2S

= 4.0 V

= 15 V

G2S

= 4.0 V

= 20

µA

= 15 V

G1S

= 0 V

= 20

µA

= 15 V V

G1S

= 0 V,V

G2S

= 4.0 V f = 1.0 KHz

= 18 V

= 245 MHz

= 200 MHz

MINIMUM

6.0

TYPICAL

MAXIMUM

UNITS

6.0

-0.5

-0.2

4.0

0.005

±10

-10

±10

-10

-5.5

-4.0

7.0

0.05

mmhos

MHz

= 15 V V

G2S

= 4.0V I

= 1.0 mA f = 1.0 MHz

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1202

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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