®
STD2NB40
N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAK
PowerMESH™ MOSFET
PRELIMINARY DATA
TYPE
STD2NB40
s
s
s
s
s
s
V
DSS
400 V
R
DS(on)
<4
Ω
I
D
2A
TYPICAL R
DS(on)
= 3.5
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
IPAK
TO-251
(Suffix "-1")
3
2
1
1
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
dv/dt
T
stg
T
j
July 1999
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
Value
400
400
±
30
2
1.26
8
40
0.32
3.5
-65 to 150
150
(
1
) I
SD
≤2A,
di/dt
≤
200 A/µs, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
o
C
C
1/6
(•) Pulse width limited by safe operating area
STD2NB40
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
3.12
100
1.5
275
C/W
oC/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
2
26
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I
D
= 250
µA
V
GS
= 0
Min.
400
1
10
±
100
Typ.
Max.
Unit
V
µA
µA
nA
Zero Gate Voltage
V
DS
= Max Rating
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
T
c
= 125 C
o
ON (∗)
Symbol
V
GS(th)
R
DS(on)
I
D(on)
Parameter
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
V
GS
= 10V
Test Conditions
I
D
= 250
µA
I
D
=1 A
2
Min.
2
Typ.
3
3.5
Max.
4
4
Unit
V
Ω
A
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
DYNAMIC
Symbol
g
fs
(∗)
C
iss
C
oss
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max
V
DS
= 25 V
f = 1 MHz
I
D
= 1 A
V
GS
= 0
Min.
0.8
Typ.
1.6
380
57
17
Max.
Unit
S
pF
pF
pF
2/6
Microcontroller MCU
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