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CAT28C16AGA-20

Description
EEPROM, 2KX8, 200ns, Parallel, CMOS, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32
Categorystorage    storage   
File Size416KB,10 Pages
ManufacturerCatalyst
Websitehttp://www.catalyst-semiconductor.com/
Environmental Compliance
Download Datasheet Parametric View All

CAT28C16AGA-20 Overview

EEPROM, 2KX8, 200ns, Parallel, CMOS, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32

CAT28C16AGA-20 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCatalyst
Parts packaging codeQFJ
package instructionQCCJ, LDCC32,.5X.6
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time200 ns
command user interfaceNO
Data pollingYES
Durability10000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
JESD-609 codee3
length13.97 mm
memory density16384 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals32
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
organize2KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height3.55 mm
Maximum standby current0.0001 A
Maximum slew rate0.035 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature40
switch bitNO
width11.43 mm
Maximum write cycle time (tWC)10 ms
CAT28C16A
16K-Bit CMOS PARALLEL EEPROM
FEATURES
I
Fast read access times: 90 ns, 120 ns, 200 ns
I
Low power CMOS cissipation:
H
GEN
FR
ALO
EE
LE
A
D
F
R
E
E
TM
I
End of write detection:
DATA
polling
I
Hardware write protection
I
CMOS and TTL compatible I/O
I
10,000 or 100,000 Program/erase cycles
I
10 or 100 year data retention
I
Commercial, industrial and automotive
–Active: 25 mA Max.
–Standby: 100
µ
A Max.
I
Simple write operation:
–On-chip address and data latches
–Self-timed write cycle with auto-clear
I
Fast write cycle time: 10ms max
temperature ranges
DESCRIPTION
The CAT28C16A is a fast, low power, 5V-only CMOS
Parallel EEPROM organized as 2K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA
Polling signals the start and end of the self-timed
write cycle. Additionally, the CAT28C16A features hard-
ware write protection.
The CAT28C16A is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed to
endure 10,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 24-pin DIP and SOIC or 32-pin PLCC pack-
ages.
BLOCK DIAGRAM
A4–A10
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
2,048 x 8
EEPROM
ARRAY
VCC
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
LOGIC
I/O BUFFERS
TIMER
DATA POLLING
I/O0–I/O7
A0–A3
ADDR. BUFFER
& LATCHES
COLUMN
DECODER
© 2004 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 1076, Rev. D

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