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CAT28C513G-12

Description
EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32
Categorystorage    storage   
File Size415KB,12 Pages
ManufacturerCatalyst
Websitehttp://www.catalyst-semiconductor.com/
Environmental Compliance
Download Datasheet Parametric View All

CAT28C513G-12 Overview

EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32

CAT28C513G-12 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCatalyst
Parts packaging codeQFJ
package instructionQCCJ, LDCC32,.5X.6
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time120 ns
command user interfaceNO
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
JESD-609 codee3
length13.97 mm
memory density524288 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals32
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
page size128 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height3.55 mm
Maximum standby current0.0002 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMATTE TIN
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature40
switch bitYES
width11.43 mm
Maximum write cycle time (tWC)5 ms
CAT28C512/513
512K-Bit CMOS PARALLEL EEPROM
FEATURES
I
Fast Read Access Times: 120/150 ns
I
Low Power CMOS Dissipation:
I
Automatic Page Write Operation:
H
GEN
FR
ALO
EE
LE
A
D
F
R
E
E
TM
–Active: 50 mA Max.
–Standby: 200
µ
A Max.
I
Simple Write Operation:
–1 to 128 Bytes in 5ms
–Page Load Timer
I
End of Write Detection:
–On-Chip Address and Data Latches
–Self-Timed Write Cycle with Auto-Clear
I
Fast Write Cycle Time:
–Toggle Bit
–DATA Polling
DATA
I
Hardware and Software Write Protection
I
100,000 Program/Erase Cycles
I
100 Year Data Retention
I
Commercial, Industrial and Automotive
–5ms Max
I
CMOS and TTL Compatible I/O
Temperature Ranges
DESCRIPTION
The CAT28C512/513 is a fast,low power, 5V-only CMOS
parallel EEPROM organized as 64K x 8-bits. It requires
a simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA
Polling and Toggle status bits signal the start and
end of the self-timed write cycle. Additionally, the
CAT28C512/513 features hardware and software write
protection.
The CAT28C512/513 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC
approved 32-pin DIP, PLCC and TSOP packages.
BLOCK DIAGRAM
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
65,536 x 8
EEPROM
ARRAY
128 BYTE PAGE
REGISTER
A7–A15
VCC
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
I/O BUFFERS
TIMER
DATA POLLING
AND
TOGGLE BIT
COLUMN
DECODER
I/O0–I/O7
A0–A6
ADDR. BUFFER
& LATCHES
© 2004 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
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