BC107/BC108 Series
Low Power Bipolar Transistors
Absolute Maximum Ratings
Description
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Power Dissipation at T
a
= 25°C
Derate above 25°C
Power Dissipation at T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Resistance
Junction to Case
R
th (j-c)
175
°C/W
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC107
45
50
6.0
0.2
0.6
2.28
1.0
6.67
-65 to +200
BC108
25
30
5.0
A
V
Unit
P
D
W
mW/°C
T
J
, T
stg
°C
Electrical Characteristics (T
a
= 25°C unless otherwise specified)
Description
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
V
CEO
V
EBO
Test Condition
I
C
= 2mA, I
B
= 0
I
E
= 10µA, I
C
= 0
BC107
BC108
BC107
BC108
Minimum
45
25
6.0
5.0
Maximum
-
V
-
15
15
-
4.0
4.0
40
100
110
110
110
200
420
-
-
0.55
-
-
-
450
800
220
450
800
0.83
1.05
0.25
0.60
0.70
0.77
V
-
µA
Unit
Collector-Cut off Current
I
CBO
V
CB
= 45V, I
E
= 0
BC107
BC108
V
CB
= 25V, I
E
= 0
T
amb
= 125°C
BC107
V
CB
= 45V, I
E
= 0
BC108
V
CB
= 25V, I
E
= 0
I
C
= 10µA, V
CE
= 5V
B Group
C Group
I
C
= 2mA, V
CE
= 5V
BC 107
BC 108
A Group
B Group
C Group
nA
DC Current
h
FE
Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Base Emitter On Voltage
V
BE (Sat)
V
CE (Sat)
V
BE (on)
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
I
C
= 2mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
Page 2
20/04/06 V1.0
BC107/BC108 Series
Low Power Bipolar Transistors
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This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes
in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied.
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Page 4
20/04/06 V1.0
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