®
STB4NB80
N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP
PowerMESH™ MOSFET
PRELIMINARY DATA
TYPE
STB4NB80
STB4NB80FP
s
s
s
s
s
V
DSS
800 V
800 V
R
DS(on)
3.3
Ω
3.3
Ω
I
D
4A
4A
TYPICAL R
DS(on)
= 3
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
1
D
2
PAK
TO-263
(Suffix "T4")
3
12
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
dv/dt(
1
)
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
I
2
PAK
TO-262
(Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
Value
STB4NB80
STB4NB80FP
800
800
±
30
4
2.4
16
100
1
4.5
-65 to 150
150
(
1
) I
SD
≤4
A, di/dt
≤
200 A/µs, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
Unit
V
V
V
A
A
A
W
W/ C
V/ns
o
o
o
4(*)
2.4(*)
16
35
0.28
4.5
2000
V
C
C
(•)
Pulse width limited by safe operating area
(*)
Limited only by maximum temperature allowed
June 1998
1/6
STB4NB80
THERMAL DATA
TO-263
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
1
62.5
0.5
300
TO-262
3.6
o
o
o
C/W
C/W
C/W
o
C
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
4
230
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I
D
= 250
µA
V
GS
= 0
Min.
800
1
50
±
100
Typ.
Max.
Unit
V
µA
µA
nA
Zero Gate Voltage
V
DS
= Max Rating
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
T
c
= 125 C
o
ON (∗)
Symbol
V
GS(th)
R
DS(on)
I
D(on)
Parameter
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
V
GS
= 10V
Test Conditions
I
D
= 250
µA
I
D
= 2 A
4
Min.
3
Typ.
4
3
Max.
5
3.3
Unit
V
Ω
A
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
DYNAMIC
Symbol
g
fs
(∗)
C
iss
C
oss
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max
V
DS
= 25 V
f = 1 MHz
I
D
= 2 A
V
GS
= 0
Min.
1.8
700
95
9
920
126
12
Typ.
Max.
Unit
S
pF
pF
pF
2/6
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