HSMS-282x
Surface Mount RF Schottky Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specifically designed for both
analog and digital applications. This series offers a wide
range of specifications and package configurations to give
the designer wide flexibility. Typical applications of these
Schottky diodes are mixing, detecting, switching, sam‑
pling, clamping, and wave shaping. The HSMS‑282x series
of diodes is the best all‑around choice for most applica‑
tions, featuring low series resistance, low forward voltage
at all current levels and good RF characteristics.
Note that Avago’s manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent
sites on the wafer, assuring the highest degree of match.
Features
•
Low Turn‑On Voltage (As Low as 0.34 V at 1 mA)
•
Low FIT (Failure in Time) Rate*
•
Six‑sigma Quality Level
•
Single, Dual and Quad Versions
•
Unique Configurations in Surface Mount SOT‑363
Package
– increase flexibility
– save board space
– reduce cost
•
HSMS‑282K Grounded Center Leads Provide up to 10
dB Higher Isolation
•
Matched Diodes for Consistent Performance
•
Better Thermal Conductivity for Higher Power Dissipation
Package Lead Code Identification,
SOT-23/SOT-143 (Top View)
SINGLE
3
SERIES
3
COMMON
ANODE
3
COMMON
CATHODE
3
•
Lead‑free Option Available
•
For more information see the Surface Mount Schottky
Reliability Data Sheet.
1
#0
2
1
#2
2
1
#3
2
1
#4
2
UNCONNECTED
PAIR
3
4
RING
QUAD
3
4
BRIDGE
QUAD
3
4
CROSS-OVER
QUAD
3
4
Package Lead Code Identification, SOT-363
(Top View)
HIGH ISOLATION
UNCONNECTED PAIR
6
5
4
1
#5
2
1
#7
2
1
#8
2
1
#9
2
UNCONNECTED
TRIO
6
5
4
Package Lead Code Identification, SOT-323
(Top View)
SINGLE
SERIES
1
2
K
3
1
2
L
3
COMMON
CATHODE QUAD
6
5
4
COMMON
ANODE QUAD
6
5
4
1
2
B
COMMON
ANODE
C
COMMON
CATHODE
M
3
1
2
N
3
6
BRIDGE
QUAD
5
4
6
RING
QUAD
5
4
1
2
E
F
P
3
1
2
R
3
Pin Connections and Package Marking
1
2
3
6
5
4
Notes:
1. Package marking provides orientation and identification.
2. See “Electrical Specifications” for appropriate package marking.
Absolute Maximum Ratings
[1]
T
C
= 25°C
Symbol
I
f
P
IV
T
j
T
stg
θ
jc
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications T
C
= 25°C, Single Diode
[3]
Part
Number
HSMS
[4]
2820
2822
2823
2824
2825
2827
2828
2829
282B
282C
282E
282F
282K
282L
282M
282N
282P
282R
Test Conditions
Notes:
1.
∆V
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2.
∆C
TO
for diodes in pairs and quads is 0.2 pF maximum.
3. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.”
5. R
D
= R
S
+ 5.2Ω at 25°C and I
f
= 5 mA.
GUx
Package
Marking
Code
C0
C2
C3
C4
C5
C7
C8
C9
C0
C2
C3
C4
CK
CL
HH
NN
CP
OO
0
2
3
4
5
7
8
9
B
C
E
F
K
L
M
N
P
R
Parameter
Forward Current (1 μs Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Unit
Amp
V
°C
°C
°C/W
SOT-23/SOT-143
1
15
150
‑65 to 150
500
SOT-323/SOT-363
1
15
150
‑65 to 150
150
Lead
Code Configuration
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Ring Quad
[4]
Bridge Quad
[4]
Cross‑over Quad
Single
Series
Common Anode
Common Cathode
High Isolation
Unconnected Pair
Unconnected Trio
Common Cathode Quad
Common Anode Quad
Bridge Quad
Ring Quad
Minimum
Breakdown
Voltage
V
BR
(V)
15
Maximum
Forward
Voltage
V
F
(mV)
340
Maximum Maximum
Forward
Reverse
Voltage
Leakage
V
F
(V) @
I
R
(nA) @
I
F
(mA)
V
R
(V)
0.5
10
100
1
Maximum
Capacitance
C
T
(pF)
1.0
Typical
Dynamic
Resistance
R
D
(Ω)
[5]
12
I
R
= 100
mA
I
F
= 1 mA
[1]
V
R
= 0V
[2]
f = 1 MHz
I
F
= 5 mA
2
Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument effectively isolates
individual diode branches from the others, allowing ac‑
curate capacitance measurement of each branch or each
diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz.
Avago defines this measurement as “CM”, and it is equiva‑
lent to the capacitance of the diode by itself. The equiva‑
lent diagonal and adjacent capaci‑tances can then be cal‑
culated by the formulas given below.
In a quad, the diagonal capacitance is the capacitance be‑
tween points A and B as shown in the figure below. The
diagonal capacitance is calculated using the following
formula
C
3
x C
4
C
1
x C
2
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
3
+ C
4
The equivalent x C
2
C
1
adjacentCcapacitance is the capacitance
3
xC
4
C
DIAGONAL
= _______ + _______
1 the figure below. This capaci‑
between points + ____________
A and C in
C
ADJACENT
= C
1
+ C
C
1
C
3
+ C
4
2
tance is calculated using the following formula
1 1
1
–– + –– + ––
1
C
2
C
3
C
C
ADJACENT
= C
1
+ ____________
4
1 1
1
–– + ––
8.33 X 10
-5
nT
+ ––
R
j
=
I +
C
2
C
3
C
4
I
b
s
Linear Equivalent Circuit Model Diode Chip
R
j
R
S
C
j
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T = temperature,
°K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
This information does
-5
nT
apply to cross‑over quad di‑
8.33 X 10
not
R
j
=
odes.
I
b
+ I
s
C
1
C
C
2
C
4
B
C
3
A
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
Ω
V
Units
V
pF
eV
A
A
HSMS-282x
15
0.7
0.69
1E‑4
2.2E‑8
1.08
6.0
0.65
2
0.5
3
Typical Performance, T
C
= 25°C (unless otherwise noted), Single Diode
100
I
F
– FORWARD CURRENT (mA)
C
T
– CAPACITANCE (pF)
10
I
R
– REVERSE CURRENT (nA)
T
A
= +125C
T
A
= +75C
T
A
= +25C
T
A
= –25C
100,000
10,000
1000
100
10
1
T
A
= +125C
T
A
= +75C
T
A
= +25C
0
5
10
15
V
R
– REVERSE VOLTAGE (V)
1
0.8
0.6
0.4
0.2
0
1
0.1
0.01
0
0.10
0.20
0.30
0.40
0.50
0
2
4
6
8
V
F
– FORWARD VOLTAGE (V)
V
R
– REVERSE VOLTAGE (V)
Figure 1. Forward Current vs. Forward Voltage at
Temperatures.
1000
Figure 2. Reverse Current vs. Reverse Voltage at
Temperatures.
30
30
Figure 3. Total Capacitance vs. Reverse Voltage.
100
1.0
V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
I
F
- FORWARD CURRENT (mA)
10
10
I
F
- FORWARD CURRENT (µA)
I
F
(Left Scale)
100
I
F
(Left Scale)
10
10
1
V
F
(Right Scale)
1
V
F
(Right Scale)
1
0.1
1
10
100
0.3
0.2
0.4
0.6
0.8
1.0
1.2
0.3
1.4
1
0.10
0.15
0.20
0.1
0.25
I
F
– FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
Figure 4. Dynamic Resistance vs. Forward
Current.
Figure 5. Typical V
f
Match, Series Pairs and Quads
at Mixer Bias Levels.
Figure 6. Typical V
f
Match, Series Pairs at Detector
Bias Levels.
1
DC bias = 3 A
0.1
10
1
10
V
O
– OUTPUT VOLTAGE (V)
V
O
– OUTPUT VOLTAGE (V)
-25C
+25C
+75C
0.1
0.01
0.001
0.0001
1E-005
-20
-10
+25C
CONVERSION LOSS (dB)
9
0.01
RF in
18 nH
3.3 nH
HSMS-282B
100 pF
Vo
RF in
68
HSMS-282B
100 pF
Vo
8
7
100 K
0
4.7 K
20
30
6
0
2
4
6
8
10
12
0.001
-40
-30
-20
-10
0
10
P
in
– INPUT POWER (dBm)
P
in
– INPUT POWER (dBm)
LOCAL OSCILLATOR POWER (dBm)
Figure 7. Typical Output Voltage vs. Input Power,
Small Signal Detector Operating at 850 MHz.
Figure 8. Typical Output Voltage vs. Input Power,
Large Signal Detector Operating at 915 MHz.
Figure 9. Typical Conversion Loss vs. L.O. Drive,
2.0 GHz (Ref AN997).
4
V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
R
D
– DYNAMIC RESISTANCE ()
Applications Information
Product Selection
Avago’s family of surface mount Schottky diodes provide
unique solutions to many design problems. Each is opti‑
mized for certain applications.
The first step in choosing the right product is to select
the diode type. All of the products in the HSMS‑282x fam‑
ily use the same diode chip–they differ only in package
configuration. The same is true of the HSMS‑280x, ‑281x,
285x, ‑286x and ‑270x families. Each family has a different
set of characteristics, which can be compared most easily
by consulting the SPICE parameters given on each data
sheet.
The HSMS‑282x family has been optimized for use in RF
applications, such as
•
DC biased small signal detectors to 1.5 GHz.
•
Biased or unbiased large signal detectors (AGC or
power monitors) to 4 GHz.
•
Mixers and frequencymultipliers to 6 GHz.
The other feature of the HSMS‑282x family is its unit‑to‑unit
and lot‑to‑lot consistency. The silicon chip used in this
series has been designed to use the fewest possible pro‑
cessing steps to minimize variations in diode characteris‑
tics. Statistical data on the consistency of this product, in
terms of SPICE parameters, is available from Avago.
For those applications requiring very high breakdown
voltage, use the HSMS‑280x family of diodes. Turn to the
HSMS‑281x when you need very low flicker noise. The
HSMS‑285x is a family of zero bias detector diodes for small
signal applications. For high frequency detector or mixer
applications, use the HSMS‑286x family. The HSMS‑270x
is a series of specialty diodes for ultra high speed clipping
and clamping in digital circuits.
8.33 X 10
-5
nT
R
j
= –––––––––––– = R
V
– R
I
S
+I
b
0.026
≈ ––––– at 25 °C
I
S
+I
b
V - IR
S
where
–––––
I = I
S
(e
0.026
– 1)
n = ideality factor (see table of SPICE parameters)
s
T = temperature in °K
I
S
= saturation current (see table of SPICE parameters)
I
b
= externally applied bias current in amps
R
v
= sum of junction and series resistance, the slope of the
V‑I curve
I
S
is a function of diode barrier height, and can range from
picoamps for high barrier diodes to as much as 5 µA for
very low
8.33 X 10
-5
nT
barrier diodes.
R
j
= –––––––––––– = R
V
– R
s
The Height of
I
the Schottky Barrier
S
+I
b
The current‑voltage characteristic of a Schottky barrier
diode at
0.026
temperature is described by the following
≈
room
at 25 °C
–––––
I
equation:
S
+ I
b
I = I
S
(e
S
–––––
V - IR
0.026
– 1)
Schottky Barrier Diode Characteristics
Stripped of its package, a Schottky barrier diode chip
consists of a metal‑semiconductor barrier formed by de‑
position of a metal layer on a semiconductor. The most
common of several different types, the passivated diode,
is shown in Figure 10, along with its equivalent circuit.
R
S
is the parasitic series resistance of the diode, the sum
of the bondwire and leadframe resistance, the resistance
of the bulk layer of silicon, etc. RF energy coupled into R
S
is lost as heat—it does not contribute to the rectified out‑
put of the diode. C
J
is parasitic junction capacitance of the
diode, controlled by the thick‑ness of the epitaxial layer
and the diameter of the Schottky contact. R
j
is the junc‑
tion resistance of the diode, a function of the total current
flowing through it.
On a semi‑log plot (as shown in the Avago catalog) the
current graph will be a straight line with inverse slope 2.3
X 0.026 = 0.060 volts per cycle (until the effect of R
S
is seen
in a curve that droops at high current). All Schottky diode
curves have the same slope, but not necessarily the same
value of current for a given voltage. This is determined
by the saturation current, I
S
, and is related to the barrier
height of the diode.
Through the choice of p‑type or n‑type silicon, and the
selection of metal, one can tailor the characteristics of a
Schottky diode. Barrier height will be altered, and at the
same time CJ and RS will be changed. In general, very low
barrier height diodes (with high values of IS, suitable for
zero bias applications) are realized on p‑type silicon. Such
diodes suffer from higher values of RS than do the n‑type.
R
S
PASSIVATION
LAYER
METAL
PASSIVATION
N-TYPE OR P-TYPE EPI
SCHOTTKY JUNCTION
N-TYPE OR P-TYPE SILICON SUBSTRATE
C
j
R
j
CROSS-SECTION OF SCHOTTKY
BARRIER DIODE CHIP
EQUIVALENT
CIRCUIT
Figure 10. Schottky Diode Chip.
5
HSMS-285A/6A fig 9
Embedded System
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