HX6656NSHT datasheet, PDF - EEWORLD Datasheet

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HX6656NSHT: Description32K x 8 ROM-SOI; File Size152KB，12 Pages; ManufacturerETC1

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HX6656NSHT Overview

32K x 8 ROM-SOI

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Military & Space Products

32K x 8 ROM—SOI

FEATURES

RADIATION

• Fabricated with RICMOS

™

IV Silicon on Insulator

(SOI) 0.75

µm

Process (L

eff

= 0.6

µm)

• Total Dose Hardness through 1x10

rad(SiO

)

• Typical Operating Power <15 mW/MHz

• Dynamic and Static Transient Upset

Hardness through 1x10

rad(Si)/s

• Dose Rate Survivability through 1x10

rad(Si)/s

• Neutron Hardness through 1x10

-2

• SEU Immune

• Latchup Free

• Asynchronous Operation

• CMOS or TTL Compatible I/O

• Single 5 V

10% Power Supply

OTHER

• Read Cycle Times

< 17 ns (Typical)

≤

25 ns (-55 to 125°C)

HX6656

• Packaging Options

- 28-Lead Flat Pack (0.500 in. x 0.720 in.)

- 28-Lead DIP, MIL-STD-1835, CDIP2-T28

- 36-Lead Flat Pack (0.630 in. x 0.650 in.)

GENERAL DESCRIPTION

The 32K x 8 Radiation Hardened ROM is a high perform-

ance 32,768 word x 8-bit read only memory with industry-

standard functionality. It is fabricated with Honeywell’s

radiation hardened technology, and is designed for use in

systems operating in radiation environments. The ROM

operates over the full military temperature range and re-

quires only a single 5 V

10% power supply. The ROM is

available with either TTL or CMOS compatible I/O. Power

consumption is typically less than 15 mW/MHz in operation,

and less than 5 mW when de-selected. The ROM operation

is fully asynchronous, with an associated typical access

time of 14 ns.

Honeywell’s enhanced SOI RICMOS

™

IV (Radiation Insen-

sitive CMOS) technology is radiation hardened through the

use of advanced and proprietary design, layout, and pro-

cess hardening techniques. The RICMOS

™

IV process is a

5-volt, SIMOX CMOS technology with a 150 Å gate oxide

and a minimum drawn feature size of 0.75

µm

(0.6

µm

effective gate length—L

eff

). Additional features include

tungsten via plugs, Honeywell’s proprietary SHARP pla-

narization process, and a lightly doped drain (LDD) struc-

ture for improved short channel reliability.

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