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GM71C256A-10

Description
Fast Page DRAM, 256KX1, 100ns, CMOS, PDIP16,
Categorystorage    storage   
File Size756KB,19 Pages
ManufacturerLG Semicon Co., Ltd.
Download Datasheet Parametric Compare View All

GM71C256A-10 Overview

Fast Page DRAM, 256KX1, 100ns, CMOS, PDIP16,

GM71C256A-10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLG Semicon Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time100 ns
I/O typeSEPARATE
JESD-30 codeR-PDIP-T16
JESD-609 codee0
memory density262144 bit
Memory IC TypeFAST PAGE DRAM
memory width1
Number of terminals16
word count262144 words
character code256000
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP16,.3
Package shapeRECTANGULAR
Package formIN-LINE
power supply5 V
Certification statusNot Qualified
refresh cycle256
Maximum slew rate0.05 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL

GM71C256A-10 Related Products

GM71C256A-10 GM71C256A-80 GM71C256A-70
Description Fast Page DRAM, 256KX1, 100ns, CMOS, PDIP16, Fast Page DRAM, 256KX1, 80ns, CMOS, PDIP16, Fast Page DRAM, 256KX1, 70ns, CMOS, PDIP16,
Is it Rohs certified? incompatible incompatible incompatible
Maker LG Semicon Co., Ltd. LG Semicon Co., Ltd. LG Semicon Co., Ltd.
Reach Compliance Code unknown unknown unknow
Maximum access time 100 ns 80 ns 70 ns
I/O type SEPARATE SEPARATE SEPARATE
JESD-30 code R-PDIP-T16 R-PDIP-T16 R-PDIP-T16
JESD-609 code e0 e0 e0
memory density 262144 bit 262144 bit 262144 bi
Memory IC Type FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
memory width 1 1 1
Number of terminals 16 16 16
word count 262144 words 262144 words 262144 words
character code 256000 256000 256000
Maximum operating temperature 70 °C 70 °C 70 °C
organize 256KX1 256KX1 256KX1
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP DIP DIP
Encapsulate equivalent code DIP16,.3 DIP16,.3 DIP16,.3
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
power supply 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 256 256 256
Maximum slew rate 0.05 mA 0.06 mA 0.07 mA
Nominal supply voltage (Vsup) 5 V 5 V 5 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL
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