2N4400H1TA datasheet, PDF - EEWORLD Datasheet

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2N4400H1TA: DescriptionSmall Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92; CategoryDiscrete semiconductor The transistor; File Size520KB，16 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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2N4400H1TA Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

2N4400H1TA Parametric

Parameter Name	Attribute value
Maker	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	255 ns
Maximum opening time (tons)	35 ns

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2N4400 / MMBT4400

2N4400

MMBT4400

TO-92

SOT-23

Mark: 83

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers

and switches requiring collector currents to 500 mA.

Absolute Maximum Ratings*

Symbol

CEO

CBO

EBO

, T

stg

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

TA = 25°C unless otherwise noted

Parameter

Value

6.0

600

-55 to +150

Units

°C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

These ratings are based on a maximum junction temperature of 150 degrees C.

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

θJC

θJA

TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

2N4400

625

5.0

83.3

200

Max

*MMBT4400

350

2.8

357

Units

mW/°C

°C/W

2001 Fairchild Semiconductor Corporation

2N4400/MMBT4400, Rev A

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package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V	40 V	40 V	40 V	40 V	40 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	20	20	20	20	20	20	20
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	RECTANGULAR
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	YES
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	255 ns	255 ns	255 ns	255 ns	255 ns	255 ns	255 ns	255 ns	255 ns
Maximum opening time (tons)	35 ns	35 ns	35 ns	35 ns	35 ns	35 ns	35 ns	35 ns	35 ns
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	-
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	-	150 °C	150 °C	150 °C
Base Number Matches	-	1	1	1	1	1	1	1	-

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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