2N4403 / MMBT4403
2N4403
MMBT4403
C
E
C
B
TO-92
E
SOT-23
Mark: 2T
B
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
40
40
5.0
600
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N4403
625
5.0
83.3
200
Max
*MMBT4403
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
©
2001 Fairchild Semiconductor Corporation
2N4403/MMBT4403, Rev. C
2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BEX
I
CEX
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 0.1 mA, I
E
= 0
I
E
= 0.1 A, I
C
= 0
V
CE
= 35 V, V
EB
= 0.4 V
V
CE
= 35 V, V
BE
= 0.4 V
40
40
5.0
0.1
0.1
V
V
V
µA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 150 mA, V
CE
= 2.0 V*
I
C
= 500 mA, V
CE
= 2.0 V*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA*
I
C
= 500 mA, I
B
= 50 mA
30
60
100
100
20
300
0.4
0.75
0.95
1.3
V
V
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation
Voltage*
Base-Emitter Saturation Voltage
0.75
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
eb
h
ie
h
re
h
fe
h
oe
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
I
C
= 20 mA, V
CE
= 10 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0,
f = 140 kHz
V
BE
= 0.5 V, I
C
= 0,
f = 140 kHz
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
200
8.5
30
1.5
0.1
60
1.0
15
8.0
500
100
µmhos
MHz
pF
pF
kΩ
x 10
-4
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA
I
B1
= I
B2
= 15 mA
15
20
225
30
ns
ns
ns
ns
*
Pulse Test: Pulse Width
£
300
ms,
Duty Cycle
£
2.0%
2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)
Typical Characteristics
V
CESAT
- COLLECTOR EMITTE R VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
500
V
CE
= 5V
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β
= 10
0.4
0.3
0.2
0.1
0
125
°
C
- 40
°
C
400
300
200
100
0
0.1
125 °C
25 °C
25 °C
- 40 °C
0.3
1
3
10
30
100
I
C
- COLLECTOR CURRENT (mA)
300
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
500
V
BE( ON)
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40
°
C
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
0.1
- 40
°
C
0.8
0.6
0.4
0.2
0
25 °C
25 °C
125
°
C
β
= 10
125°C
V
CE
= 5V
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
1
10
I
C
- COLLECTOR CURRE NT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
100
V
CB
= 35V
10
Input and Output Capacitance
vs Reverse Bias Voltage
20
CAPACITANCE (pF)
16
12
C ib
1
8
4
0
0.1
C ob
0.1
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
10
REVERSE BIAS VOLTAGE (V)
50
2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Switching Times
vs Collector Current
250
I
B1
= I
B2
=
200
V cc = 15 V
I
c
10
Turn On and Turn Off Times
vs Collector Current
500
I
B1
= I
B2
=
400
V cc = 15 V
I
c
10
TIME (nS)
TIME (nS)
150
100
tr
tf
ts
300
200
t off
50
td
100
0
10
t on
0
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
100
I
C
- COLLECTOR CURRENT (mA)
1000
Rise Time vs Collector
and Turn On Base Currents
I
B1
- TURN 0N BASE CURRENT (mA)
50
P
D
- POWER DISSIPATION (W)
1
Power Dissipation vs
Ambient Temperature
20
10
5
30 ns
t r = 15 V
0.75
SOT-223
TO-92
0.5
SOT-23
0.25
2
60 ns
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics
(f = 1.0kHz)
CHAR. RELATIVE TO VALUES AT I
C
= -10mA
CHAR. RELATIVE TO VALUES AT V
CE
= -10V
Common Emitter Characteristics
5
h
oe
2
1
0.5
h
ie
h
re
h
fe
Common Emitter Characteristics
1.3
h
re
h
ie
h
fe
h
oe
1.2
h
re
and h
oe
1.1
1
h
ie
0.9
h
fe
0.8
-4
I
C
= -10mA
T
A
= 25
o
C
-20
0.2
0.1
_
V
CE
= -10 V
T
A
= 25
o
C
1
_
_
_
_
2
5
10
20
I
C
- COLLECTOR CURRENT (mA)
_
50
-8
-12
-16
V
CE
- COLLECTOR VOLTAGE (V)
CHAR. RELATIVE TO VALUES AT T
A
= 25
o
C
Common Emitter Characteristics
1.5
I
C
= -10mA
1.4
V = -10 V
CE
1.3
1.2
1.1
h
oe
1
0.9
0.8
0.7
0.6
0.5
-40
h
fe
-20
0
20
40
60
80
T
A
- AMBIENT TEMPERATURE (
o
C)
100
h
re
h
ie
h
fe
h
ie
h
re
h
oe
DSP and ARM Processors
京公网安备 11010802033920号
EEWORLD
