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HX6256KQHT

Description
Standard SRAM, 32KX8, 25ns, CMOS, DIE
Categorystorage    storage   
File Size176KB,12 Pages
ManufacturerHoneywell
Websitehttp://www.ssec.honeywell.com/
Download Datasheet Parametric View All

HX6256KQHT Overview

Standard SRAM, 32KX8, 25ns, CMOS, DIE

HX6256KQHT Parametric

Parameter NameAttribute value
Objectid1447087466
Parts packaging codeDIE
package instructionDIE,
Contacts28
Reach Compliance Codeunknown
Country Of OriginUSA
ECCN code3A001.A.2.C
YTEOL4
Maximum access time25 ns
Other featuresTTL COMPATIBLE INPUTS/OUTPUTS
JESD-30 codeX-XUUC-N
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Output characteristics3-STATE
ExportableYES
Package body materialUNSPECIFIED
encapsulated codeDIE
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-PRF-38535 Class Q
Minimum standby current2.5 V
Maximum slew rate0.04 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formNO LEAD
Terminal locationUPPER
total dose1M Rad(Si) V
Military & Space Products
32K x 8 STATIC RAM—SOI
FEATURES
RADIATION
• Fabricated with RICMOS
IV Silicon on Insulator
(SOI) 0.75
µm
Process (L
eff
= 0.6
µm)
• Total Dose Hardness through 1x10
6
rad(SiO
2
)
• Neutron Hardness through 1x10
14
cm
-2
• Dynamic and Static Transient Upset Hardness
through 1x10
9
rad(Si)/s
• Dose Rate Survivability through 1x10
11
rad(Si)/s
• Soft Error Rate of <1x10
-10
upsets/bit-day
in Geosynchronous Orbit
• No Latchup
OTHER
• Listed On SMD#5962–95845
HX6256
• Fast Cycle Times
17 ns (Typical)
25 ns (-55 to 125°C) Read Write Cycle
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V
±
10% Power Supply
• Packaging Options
– 28-Lead CFP (0.500 in. x 0.720 in.)
– 28-Lead DIP, MIL-STD-1835, CDIP2-T28
– 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.)
– 36-Lead CFP—Top Braze (0.630 in. x 0.650 ins.)
– Multi-Chip Module (MCM)
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened Static RAM is a high
performance 32,768 word x 8-bit static random access
memory with industry-standard functionality. It is fabricated
with Honeywell’s radiation hardened technology, and is
designed for use in systems operating in radiation environ-
ments. The RAM operates over the full military temperature
range and requires only a single 5 V
±
10% power supply.
The RAM is available with either TTL or CMOS compatible
I/O. Power consumption is typically less than 15 mW/MHz
in operation, and less than 5 mW when de-selected. The
RAM read operation is fully asynchronous, with an associ-
ated typical access time of 14 ns at 5 V.
Honeywell’s enhanced SOI RICMOS
IV (Radiation In-
sensitive CMOS) technology is radiation hardened
through the use of advanced and proprietary design,
layout, and process hardening techniques. The RICMOS
IV process is a 5-volt, SIMOX CMOS technology with a 150
Å gate oxide and a minimum drawn feature size of 0.75
µm
(0.6
µm
effective gate length—L
eff
). Additional features
include tungsten via plugs, Honeywell’s proprietary
SHARP planarization process, and a lightly doped drain
(LDD) structure for improved short channel reliability. A 7
transistor (7T) memory cell is used for superior single
event upset hardening, while three layer metal power
bussing and the low collection volume SIMOX substrate
provide improved dose rate hardening.
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