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2SA1301

Description
Bipolar Transistors;PNP;-12A;-160V;TO-3PL
CategoryDiscrete semiconductor   
File Size221KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SA1301 Overview

Bipolar Transistors;PNP;-12A;-160V;TO-3PL

2SA1301 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
isc
Silicon PNP Power Transistor
2SA1301
DESCRIPTION
·High
Power Dissipation
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -160V(Min)
·Complement
to Type 2SC3280
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power
amplifier applications
·Recommend
for 80W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
Collector-Base Voltage
VALUE
-160
UNIT
V
V
CEO
Collector-Emitter Voltage
-160
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-12
A
I
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
-1.2
A
P
C
120
W
T
J
150
T
stg
Storage Temperature Range
-55~150
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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