2N7614M1 datasheet, PDF - EEWORLD Datasheet

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2N7614M1: DescriptionPower Field-Effect Transistor, 0.8A I(D), 250V, 1.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAGE-14; CategoryDiscrete semiconductor The transistor; File Size202KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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2N7614M1 Overview

Power Field-Effect Transistor, 0.8A I(D), 250V, 1.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAGE-14

2N7614M1 Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	HERMETIC SEALED PACKAGE-14
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	50.4 mJ
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (ID)	0.8 A
Maximum drain-source on-resistance	1.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-036AB
JESD-30 code	R-PDIP-T14
Number of components	4
Number of terminals	14
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	3.2 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD-97339

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

THRU-HOLE (MO-036AB)

Product Summary

Part Number Radiation Level R

DS(on)

IRHLG77214

100K Rads (Si) 1.1Ω

IRHLG73214

300K Rads (Si)

1.1Ω

0.8A

2N7614M1

IRHLG77214

250V, Quad N-CHANNEL

TECHNOLOGY

International Rectifier’s R7

Logic Level Power MOSFETs

provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation

environments.The threshold voltage remains within

acceptable operating limits over the full operating

temperature and post radiation.This is achieved while

maintaining single event gate rupture and single event

burnout immunity.

The device is ideal when used to interface directly with most

logic gates, linear IC’s, micro-controllers, and other device

types that operate from a 3.3-5V source. It may also be

used to increase the output current of a PWM, voltage

comparator or an operational amplifier where the logic level

drive signal is available.

MO-036AB

Features:

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 4.5V, TC= 25°C

ID @ VGS = 4.5V, TC= 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

0.8

0.5

3.2

1.4

0.01

±10

50.4

0.8

0.14

12.3

-55 to 150

Pre-Irradiation

Units

W/°C

V/ns

300 (0.063in/1.6mm from case for 10s)

1.3 (Typical)

www.irf.com

02/25/11

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