BCV28, BCV48
PNP Silicon Darlington Transistors
•
For general AF applications
•
High collector current
•
High current gain
•
Complementary types: BCV29, BCV49 (NPN)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
3
1
2
2
Type
BCV28
BCV48
Maximum Ratings
Parameter
Collector-emitter voltage
BCV28
BCV48
Collector-base voltage
BCV28
BCV48
Emitter-base voltage
Collector current
Marking
ED
EE
1=B
1=B
Pin Configuration
2=C
2=C
Symbol
V
CEO
30
60
V
CBO
40
80
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
10
500
800
100
200
1
150
Package
SOT89
SOT89
Value
Unit
V
3=E
3=E
mA
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation-
T
S
≤
130 °C
Junction temperature
Storage temperature
W
°C
-65 ... 150
1
2011-10-05
BCV28, BCV48
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
20
Unit
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 10 mA,
I
B
= 0 , BCV28
I
C
= 10 mA,
I
B
= 0 , BCV48
Unit
V
30
60
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
µA
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0 , BCV28
I
C
= 100 µA,
I
E
= 0 , BCV48
40
80
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
10
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0 , BCV28
V
CB
= 60 V,
I
E
= 0 , BCV48
V
CB
= 30 V,
I
E
= 0 ,
T
A
≤
150 °C, BCV28
V
CB
= 60 V,
I
E
= 0 ,
T
A
≤
150 °C, BCV48
-
-
-
-
I
EBO
h
FE
-
-
-
-
-
0.1
0.1
10
10
100
nA
-
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
-
DC current gain
1)
I
C
= 10 µA,
V
CE
= 1 V, BCV28
I
C
= 10 µA,
V
CE
= 1 V, BCV48
I
C
= 10 mA,
V
CE
= 5 V, BCV28
I
C
= 10 mA,
V
CE
= 5 V, BCV48
I
C
= 100 mA,
V
CE
= 5 V, BCV28
I
C
= 100 mA,
V
CE
= 5 V, BCV48
I
C
= 0.5 A,
V
CE
= 5 V, BCV28
I
C
= 0.5 A,
V
CE
= 5 V, BCV48
4000
2000
10000
4000
20000
10000
4000
2000
V
CEsat
V
BEsat
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1.5
2011-10-05
V
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 0.1 mA
-
-
Base emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 0.1 mA
2
BCV28, BCV48
1
Pulse
test: t < 300µs; D < 2%
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
-
4.5
-
f
T
-
200
-
typ.
max.
Unit
MHz
pF
3
2011-10-05
BCV28, BCV48
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 5 V
10
6
h
FE
5
BCV 28/48
EHP00316
Collector-emitter saturation voltage
I
C
=
ƒ
(V
CEsat
),
h
FE
= 1000
10
3
BCV 28/48
EHP00313
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
10
5
5
125 ˚C
25 ˚C
10
2
5
-55 ˚C
10
4
5
10
1
5
10
3
10
-1
10
0
10
1
10
2
mA 10
3
10
0
0
0.5
1.0
V
V
CEsat
1.5
Ι
C
Base-emitter saturation voltage
I
C
=
ƒ
(V
BEsat
),
h
FE
= 1000
10
3
BCV 28/48
EHP00314
Collector cutoff current
I
CBO
=
ƒ
(T
A
)
V
CB
=
V
CEmax
10
4
BCV 28/48
EHP00309
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
Ι
CBO
nA
max
10
3
10
2
5
10
2
typ
10
1
10
1
5
10
0
0
1.0
2.0
V
V
BEsat
3.0
10
0
0
50
100
˚C
T
A
150
4
2011-10-05
BCV28, BCV48
Transition frequency
f
T
=
ƒ
(I
C
)
V
CE
= 5 V
10
3
f
T
BCV 28/48
EHP00312
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ
(V
EB
)
16
pF
MHz
C
CB
(C
EB
)
10
2
12
10
8
CEB
5
6
4
CCB
2
10
1
10
0
10
1
10
2
mA
10
3
0
0
4
8
12
16
V
22
Ι
C
V
CB
(V
EB
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
1200
5
P
tot max
P
tot DC
10
2
BCV 28/48
EHP00310
mW
t
p
D
=
T
t
p
T
P
tot
800
5
600
400
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
200
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
t
p
s
10
0
5
2011-10-05
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