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BSC022N04LS6

Description
Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size2MB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BSC022N04LS6 Overview

Power Field-Effect Transistor,

BSC022N04LS6 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Reach Compliance Codecompli
ECCN codeEAR99
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
BSC022N04LS6
MOSFET
OptiMOS
TM
6Power-Transistor,40V
Features
•Optimizedforsynchronousapplication
•Verylowon-resistanceR
DS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•175°Crated
ProductValidation
Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof
JEDEC47/20/22
1
2
3
TDSON-8FL(enlargedsourceinterconnection)
8
7
6
5
5
6
4
4
7
8
3
2
1
S1
S2
8D
7D
6D
5D
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
oss
Q
G
(0V..10V)
Q
G
(0V..4.5V)
Value
40
2.2
100
31
28
13.5
Unit
V
mΩ
A
nC
nC
nC
S3
G4
Type/OrderingCode
BSC022N04LS6
Package
TDSON-8 FL
Marking
22N04LS6
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1
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