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BSS670S2LL6327

Description
Small Signal Field-Effect Transistor, 0.54A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size793KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BSS670S2LL6327 Overview

Small Signal Field-Effect Transistor, 0.54A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3

BSS670S2LL6327 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)0.54 A
Maximum drain-source on-resistance0.825 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)10 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
BSS670S2L
OptiMOS
®
Buck converter series
Feature
Product Summary
V
DS
R
DS(on)
I
D
55
650
0.54
PG-SOT 23
Enhancement mode
Logic Level
Avalanche rated
1)
N-Channel
V
mΩ
A
Drain
pin 3
Type
BSS670S2L
Package
PG-SOT 23
Tape and Reel
L6327
Marking
BSs
Gate
pin1
Source
pin 2
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
Unit
A
0.54
0.43
I
D puls
2.2
Pulsed drain current
T
A
=25°C
Avalanche energy, single pulse I
D
= 0.54 A, R
G
= 25
1)
Gate source voltage
Power dissipation
T
A
=25°C
E
AS
V
GS
P
tot
8.1
± 20
0.36
mJ
V
W
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
-55... +150
55/150/56
°C
1) Valid from devices with date code 0604 onwards
Rev. 2.3
Page 1
2006-12-01
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