3CG751
TO-92MOD Transistor (PNP)
1
2
3
1.EMITTER
2.COLLECTOR
3.BASE
TO-92MOD
5.800
6.200
8.400
8.800
0.900
1.100
0.400
0.600
13.800
14.200
Features
High power amplifier
Low
V
CE(sat)
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-30
-30
-5
-1.5
0.9
150
-55 to +150
Units
V
V
V
A
W
℃
℃
1.500 TYP
2.900
3.100
0.000
0.380
1.600
0.400 4.700
0.500 5.100
4.000
1.730
2.030
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
unless
Test
otherwise
conditions
specified)
MIN
-30
-30
-5
-0.1
-0.1
100
400
-2
50
80
V
MHz
pF
TYPE
MAX
UNIT
V
V
V
µA
µA
I
C
= -100µA, I
E
=0
I
C
= -1 mA ,
I
B
=0
I
E
= -100µA , I
C
=0
V
CB
= -30 V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
=-2 V, I
C
= -500mA
I
C
= -1.5 A, I
B
= -30mA
V
CE
= -5V, I
C
= -100mA
V
CB
=-10V,I
E
=0,f=1MHz
CLASSIFICATION OF h
FE
Rank
Range
O
100-240
Y
150-400
Revision:20170701-P1
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t
p
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