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3KP33A

Description
TVS Diode, 3000W, 36.70_ V, 40.60V, 33V, 2uA, 56.29A, 53.3V
CategoryDiscrete semiconductor    Transient suppression diode   
File Size1MB,4 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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3KP33A Overview

TVS Diode, 3000W, 36.70_ V, 40.60V, 33V, 2uA, 56.29A, 53.3V

3KP33A Parametric

Parameter NameAttribute value
Case StyleR-6
Ppk(W)3000
MIN_(V)36.70_
MAX_(V)40.60
Vwm_(V)33
Ir_(uA)2
Ippm_(A)56.29
Vc_(V)53.3
classDiodes
3KP Series
Reverse Voltage: 5.0 to 440 V
Peak Pulse Power: 3000 W
Features
Axial Lead
Transient Voltage Suppressors
R-6/P600
Glass passivated chip
3000 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle):0.01 %
Low leakage
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
RoHS compliant
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Solderable per MIL-STD-202, method
208 guranteed
Polarity: Color band denotes cathode end
except Bipolar
Mounting position: Any
1.000 [25.40]
MIN
DIA.
0.052 1.32
0.048 1.22
[ ]
Mechanical Data
0.360 9.14
0.340 8.64
[ ]
DIA.
0.360 9.14
0.340 8.64
[ ]
1.000 [25.40]
MIN
Dimensions :
inch [ mm ]
Maximum Ratings(T
A
=25℃ unless otherwise noted)
Parameter
Peak power dissipation with a 10/1000μs waveform
(1)
(1)
Peak pulse current wih a 10/1000μs waveform
Power dissipation on infinite heatsink at T
L
= 75 °C
Peak forward surge current, 8.3 ms single half sine-wave
(2)
unidirectional only
Maximum instantaneous forward voltage at 100 A for
(3)
unidirectional only
Operating junction and storage temperature range
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above T
A
= 25 °C per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
Value
Symbol
P
PP
3000
I
PP
See Next Table
P
D
6.5
I
FSM
V
F
T
J
, T
STG
300
3.5/5.0
- 55 to +150
Unit
W
A
W
A
V
°C
ht
t
p
:
//
Revision:20170701-P1
www.lgesem i
.c
o
m
mail:lge@lgesemi.com
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