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8A10(G)

Description
Ordinary rectifier diode, 8.0A, 1000V, 400A, 1.0V, 8.0A, 10.0μA, /nS
CategoryDiscrete semiconductor    Ordinary rectifier diode   
File Size1MB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

8A10(G) Overview

Ordinary rectifier diode, 8.0A, 1000V, 400A, 1.0V, 8.0A, 10.0μA, /nS

8A10(G) Parametric

Parameter NameAttribute value
Case StyleR-6
IF(A)8.0
Maximum recurrent peak reverse voltage1000
Peak forward surge current400
Maximum instantaneous forward voltage1.0
@IVA(A)8.0
Maximum reverse current10.0
TRR(nS)/
classDiodes
8A05-8A10
Plastic Silicon Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT:
8.0
A
Features
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned witn Freon,Alcohol,lsopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
R-6
Mechanical Data
Case:JEDEC R-6,molded plastic
Dimensions in millimeters
Polarity: Color band denotes cathode
Weight: 0.072 ounces,2.04 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
8A05
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
8A1
100
70
100
8A2
200
140
200
8A4
400
280
400
8.0
8A6
600
420
600
8A8
800
560
800
8A10
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T =125
J
I
FSM
400
A
Maximum instantaneous forw ard voltage
@
8.0
A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
1.0
10
100
120
10
- 55 ---- + 150
- 55 ---- + 150
V
µA
pF
/W
Operating junction temperature range
Storage temperature range
2. Thermal resistance from junction to ambient.
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com

8A10(G) Related Products

8A10(G) 8A05(G) 8A1(G) 8A2(G) 8A4(G) 8A6(G) 8A8(G)
Description Ordinary rectifier diode, 8.0A, 1000V, 400A, 1.0V, 8.0A, 10.0μA, /nS Ordinary rectifier diode, 8.0A, 50V, 400A, 1.0V, 8.0A, 10.0μA, /nS Ordinary rectifier diode, 8.0A, 100V, 400A, 1.0V, 8.0A, 10.0μA, /nS Ordinary rectifier diode, 8.0A, 200V, 400A, 1.0V, 8.0A, 10.0μA, /nS Ordinary rectifier diode, 8.0A, 400V, 400A, 1.0V, 8.0A, 10.0μA, /nS Ordinary rectifier diode, 8.0A, 600V, 400A, 1.0V, 8.0A, 10.0μA, /nS Ordinary rectifier diode, 8.0A, 800V, 400A, 1.0V, 8.0A, 10.0μA, /nS
Case Style R-6 R-6 R-6 R-6 R-6 R-6 R-6
IF(A) 8.0 8.0 8.0 8.0 8.0 8.0 8.0
Maximum recurrent peak reverse voltage 1000 50 100 200 400 600 800
Peak forward surge current 400 400 400 400 400 400 400
Maximum instantaneous forward voltage 1.0 1.0 1.0 1.0 1.0 1.0 1.0
@IVA(A) 8.0 8.0 8.0 8.0 8.0 8.0 8.0
Maximum reverse current 10.0 10.0 10.0 10.0 10.0 10.0 10.0
TRR(nS) / / / / / / /
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