BAV101 datasheet, PDF - EEWORLD Datasheet

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BAV101: DescriptionSmall Signal Switching Diode, 250mA, 120V, 1V, 0.1uA, 5uA; CategoryDiscrete semiconductor Small signal switching diode; File Size1012KB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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BAV101 Overview

Small Signal Switching Diode, 250mA, 120V, 1V, 0.1uA, 5uA

BAV101 Parametric

Parameter Name	Attribute value
Case Style	MINIMELF
IF（mA）	250
Maximum recurrent peak reverse voltage	120
TRR（nS)	50
Maximum instantaneous forward voltage	1
@IF（uA）	0.1
Maximum reverse curre	5
@VR
class	Diodes

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BAV100/101/102/103

500mW.Hermetically Sealed Glass High Voltage Switching Dides

MINI MELF

Features

High Voltage Switching Device

Mini Melf package

Surface device type mounting

Hermetically sealed glass

Compression bonded construction

All external surface are corrosion resistant

and leads are readily solderable

RoHS compliant

Matte Tin (Sn) lead finish

Color band indicates Negative Polarity

Dimension in millimeters

Maximum Ratings and Electrical Characteristics

Rating at 25

o

Cambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Maximum Ratings

Type Number

Repetitive Peak Reverse Voltage

Symbol

V

RRM

Value

250

Units

V

mA

A

mW

O

C

Units

V

nA

Average Rectified Forward Current

I

F(AV)

200

Non- Repetitive Peak Forward Surge Current

1.0

I

FSM

Pulse Width =1.0 Second

4.0

Pulse Width = 1.0 usecond

Power Dissipation

Pd

500

Operating and Storage Temperature Range

T

J

, T

STG

-65 to + 200

Electrical Characteristics

Type Number

Symbol

Min

Max

60

Breakdown Voltage

BAV100 IR=100uA

120

BAV101 IR=100uA

B

V

200

BAV102 IR=100uA

250

BAV103 IR=100uA

Forward Voltage

IF= 100mA

V

F

1.0

Peak Reverse Current BAV100 VR=50V

100

IR

BAV101 VR=100V

100

-

BAV102 VR=150V

100

BAV103 VR=200V

100

R

ӨJA

Thermal Resistance, Junction to Ambient

350

-

Junction Capacitance VR=0, f=1.0MHz

Cj

5.0

-

Reverse Recovery Time (Note)

trr

50

Notes: Reverse Recovery Test Conditions: IF=IR=30mA, Irr=3mA, R

L

=100Ω.

o

C/W

pF

nS

ht

t

p

:

//

Revision:20170701-P1

www.lgesemi

.c

o

m

mail:lge@lgesemi.com

BAV101 Related Products

	BAV101	BAV102	BAV103	BAV100
Description	Small Signal Switching Diode, 250mA, 120V, 1V, 0.1uA, 5uA	Small Signal Switching Diode, 250mA, 200V, 1V, 0.1uA, 5uA	Small Signal Switching Diode, Case Style : MINIMELF; IF (A) : 0.25; VRRM (V) : 250; TRR (nS): 50; VF (V) : 1; @IF (A) : 0.1; IR (µA) TA=25ºC: 5	Small Signal Switching Diode, 250mA, 60V, 1V, 0.1uA, 5uA
Case Style	MINIMELF	MINIMELF	MINIMELF	MINIMELF
IF（mA）	250	250	250	250
Maximum recurrent peak reverse voltage	120	200	250	60
TRR（nS)	50	50	50	50
Maximum instantaneous forward voltage	1	1	1	1
@IF（uA）	0.1	0.1	0.1	0.1
class	Diodes	Diodes	Diodes	Diodes

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