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BC808

Description
Bipolar transistor, 25V, 0.5A, 200MHZ, -55-150℃
CategoryDiscrete semiconductor    Bipolar transistor   
File Size1MB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

BC808 Overview

Bipolar transistor, 25V, 0.5A, 200MHZ, -55-150℃

BC808 Parametric

Parameter NameAttribute value
polarityPNP
Collector-emitter breakdown voltage25
Collector Current - Continuous0.5
DC current gain - Min100
DC current gain - Max630
Transition frequency200
PackageSOT-23
Storage Temperature Range-55-150
classTransistors
BC808-16/-25/-40
PNP General Purpose Amplifier
A
SOT-23
Dim
E
FEATURES
High collector current.
High current gain.
Low collector-emitter stauration voltage.
Complementary types:BC818.
D
G
H
K
B
Min
2.70
1.10
Max
3.10
1.50
A
B
C
D
J
1.0 Typical
0.4 Typical
0.35
1.80
0.02
2.20
0.48
2.00
0.1
2.60
E
G
H
J
K
0.1 Typical
ORDERING INFORMATION
Type No.
BC808-16
BC808-25
BC808-40
Marking
5E
5F
5G
Package Code
SOT-23
SOT-23
SOT-23
C
All Dimensions in mm
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
R
θjA
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Peak collector current
Base current
Peak base current
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Value
-30
-25
-5
-500
-1
-100
-200
330
417
-55 to +150
Unit
V
V
V
mA
A
mA
mA
mW
℃/W
ELECTRICAL CHARACTERISTICS
@ Ta=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
808-16
808-25
808-40
808-16
808-25
808-40
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
unless otherwise specified
MIN
-30
-25
-5
-0.1
-0.1
100
160
250
60
100
170
-0.7
-1.2
10
200
V
V
pF
MHz
250
400
630
MAX
UNIT
V
V
V
μA
μA
Test conditions
I
C
=-10μA I
E
=0
I
C
=-10mA I
B
=0
I
E
=-10μA I
C
=0
V
CB
=-25V I
E
=0
V
CE
=-4V
I
C
=0
V
CE
=-1V I
C
=-100mA
DC current gain
h
FE
V
CE(sat)
V
BE(sat)
C
obo
f
T
V
CE
=-1V I
C
=-300mA
I
C
=-500mA I
B
=-50mA
I
C
=-500mA I
B
=-50mA
V
CB
=-10V,f=1.0MHz
V
CE
=-5V,I
C
=-50mA
f=100MHz
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output capacitance
Transition frequency
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
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m
mail:lge@lgesemi.com
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