BC856/857/858
PNP
general purpose Transistor
FEATURES
Low current.(max.100mA).
Low voltage..
K
B
A
SOT-23
Dim
E
Min
2.70
1.10
Max
3.10
1.50
A
B
C
D
E
G
H
J
K
APPLICATIONS
General purpose switching and amplification.
D
J
G
H
1.0 Typical
0.4 Typical
0.35
1.80
0.02
2.20
0.48
2.00
0.1
2.60
ORDERING INFORMATION
Type No.
BC856A/B
BC857A/B/C
BC858A/B/C
Marking
3A/3B
3E/3F/3G
3J/3K/3L
Package Code
SOT-23
SOT-23
SOT-23
C
0.1 Typical
All Dimensions in mm
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
Collector-Emitter Voltage
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Parameter
Collector-Base Voltage
BC856
BC857
BC858
BC856
BC857
BC858
Value
-80
-50
-30
-65
-45
-30
-5
-0.1
250
-65 to +150
Units
V
V
V
A
mW
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
BC856
BC857
BC858
Symbol Test conditions
MIN TYP MAX
-80
-50
-30
-65
-45
-30
-5
-1
-15
-0.1
125
220
420
250
475
800
-0.65
-0.3
-0.7
-0.85
-0.6 -0.65 -0.75
-0.82
4.5
V
UNIT
V
(BR)CBO
I
C
=-10μA,I
E
=0
V
Collector-emitter breakdown voltage BC856
BC857 V
(BR)CEO
BC858
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
BC856A,857A,858A
BC856B,857B,858B
BC857C,858C
V
(BR)EBO
I
CBO
I
EBO
I
C
=-10mA,I
B
=0
I
E
=-1μA,I
C
=0
V
CB
=-30V,I
E
=0
V
EB
=-5V,I
C
=0
V
V
nA
μA
h
FE
V
CE
=-5V,I
C
=-2mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-100mA, I
B
=-5mA
I
C
=-10mA, I
B
=-0.5mA
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA, I
B
=-5mA
I
C
=-2mA,V
CE
=-5V
I
C
=-10mA,V
CE
=-5V
V
CB
=-10V,I
E
=I
e
=0
f=1MHz
I
C
=-200uA,V
CE
=-5V,
R
S
=2kΩ,f=1kHz,
B=200Hz
V
CE
=-5V, I
C
= -10mA
f=100MHz
100
Base-emitter saturation voltage
V
BE(sat)
V
Base-emitter voltage
V
BE(on)
V
collector capacitance
C
c
pF
Transition frequency
F
2
10
dB
Transition frequency
f
T
MHz
ht
t
p
:
//
Revision:20170701-P1
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