KTC3876
NPN Silicon Epitaxial Planar Transistor
FEATURES
Complementary To KTA1505.
Excellent H
FE
Linearity.
Low noise.
K
B
A
SOT-23
Dim
E
Min
2.70
1.10
Max
3.10
1.50
A
B
C
D
E
G
H
J
1.0 Typical
0.4 Typical
0.35
1.80
0.02
2.20
0.48
2.00
0.1
2.60
APPLICATIONS
General purpose application, switching application.
D
G
H
J
0.1 Typical
ORDERING INFORMATION
Type No.
KTC3876
Marking
WO/WY/WG
C
K
All Dimensions in mm
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction and Storage Temperature
Value
35
30
5
500
150
-55 to +150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test conditions
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=35V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=1V,I
C
=100mA
V
CE
=6V,I
C
=400mA
I
C
=100mA, I
B
=10mA
V
CE
=1V,I
C
=100mA
V
CE
=6V, I
C
= 20mA
V
CB
=6V,I
E
=0,f=1MHz
70
25
0.1
0.8
300
7
0.25
1.0
V
V
MHz
pF
MIN
35
30
5
0.1
0.1
400
TYP
MAX
UNIT
V
V
V
μA
μA
CLASSIFICATION
Rank
Range
Marking
Device
KTC3876
Package
SOT-23
OF
h
FE
O
70-140
WO
Shipping
Y
120-240
WY
G
200-400
WG
3000/Tape&Reel
ht
t
p
:
//
Revision:20170701-P1
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