KTC3879
NPN Silicon Epitaxial Planar Transistor
A
SOT-23
Dim
E
FEATURES
High power gain.
K
B
Min
2.70
1.10
Max
3.10
1.50
A
B
C
D
1.0 Typical
0.4 Typical
0.35
1.80
0.02
2.20
0.48
2.00
0.1
2.60
APPLICATIONS
High frequency application.
HF,VHF band amplifier appilication.
D
G
H
J
E
G
H
J
K
0.1 Typical
ORDERING INFORMATION
Type No.
KTC3879
Marking
RR/RO/RY
Package Code
SOT-23
C
All Dimensions in mm
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction and Storage Temperature
Value
35
30
4
50
-50
150
-55 to +150
Units
V
V
V
mA
mA
mW
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test conditions
I
C
=100μA,I
E
=0
I
C
=100μA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=35V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=12V,I
C
=2mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
= 1mA
V
CB
=10V,I
E
=0,f=1MHz
100
1.4
2.0
40
MIN
35
30
4
0.1
1.0
240
0.4
1.0
400
3.2
V
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
CLASSIFICATION
Rank
Range
Marking
OF
h
FE
R
40-80
RR
O
70-140
RO
Y
120-240
RY
ht
t
p
:
//
Revision:20170701-P1
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