KTC4379
SOT-89 Transistor(NPN)
1.
BASE
1
2
3
2.
COLLECTOR
3.
EMITTER
1.6
1.4
SOT-89
4.6
4.4
1.8
1.4
B
Features
Low saturation voltage
High speed switching time
Complementary to KTA1666
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
50
5
2
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
0.8
MIN
2.6 4.25
2.4 3.75
0.44
0.37
0.13
B
0.53
0.48 0.40
2x)
0.35
1.5
3.0
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on Time
Switching Time
Storage Time
Fall Time
CLASSIFICATION OF
Rank
Range
Marking
h
FE(1)
O
70-140
UO
Y
120-240
UY
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
V
CC
=30V, I
C
=1A, I
B1
=-I
B2
=-0.05A
V
CE
=2V, I
C
=1.5A
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CB
=10V, I
E
=0, f=1MHz
120
30
0.1
1.0
0.1
μs
40
0.5
1.2
V
V
MHz
pF
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
Test
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=500mA
70
conditions
MIN
50
50
5
0.1
0.1
240
TYP
MAX
UNIT
V
V
V
μA
μA
Revision:20170701-P1
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