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LGE2302

Description
Field effect transistor, 1.25W, 20V, 2.8A, 4.5V, 0.6~1.2GS
CategoryDiscrete semiconductor    Field effect transistor   
File Size1MB,3 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

LGE2302 Overview

Field effect transistor, 1.25W, 20V, 2.8A, 4.5V, 0.6~1.2GS

LGE2302 Parametric

Parameter NameAttribute value
polarityN channel
Pd(W)1.25
V(BR)DS_min(V)20
ID_max(A)2.8
Rds_max(Ω)0.085
@VGS(V)4.5
VTH(GS)0.6~1.2
PACKAGESOT-23
classTransistors
LGE2302
N-Channel 20-V(D-S) Mosfet
1. GATE
2. SOURCE
3. DRAIN
SOT-23
Features
TrenchFET Power MOSFET
Applications
Load Switch for Portable Devices
DC/DC Converter
Dimensions in inches and (millimeters)
MARKING:
2302
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source-Drain Current(Diode Conduction)
Power Dissipation
Thermal Resistance from Junction to Ambient
(t≤5s)
Operating Junction
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
S
P
D
R
θJA
T
J
T
STG
Value
20
±8
2.1
0.6
0.35
357
150
-55 ~+150
Unit
V
A
W
℃/W
Revision:20180501-P1
ht
t
p
:
//
www.lgesem i
.c
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m
mail:lge@lgesemi.com
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