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LGE2305

Description
Field Effect Transistor, 1.37W, -12V, -4.2A, -10V, -0.5GS
CategoryDiscrete semiconductor    Field effect transistor   
File Size3MB,5 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

LGE2305 Overview

Field Effect Transistor, 1.37W, -12V, -4.2A, -10V, -0.5GS

LGE2305 Parametric

Parameter NameAttribute value
polarityP Channel
Pd(W)1.37
V(BR)DS_min(V)-12
ID_max(A)-4.2
Rds_max(Ω)0.053
@VGS(V)-10
VTH(GS)-0.5
PACKAGESOT-23
classTransistors
LGE2305
P-Channel 20-V(D-S) Mosfe
DESCRIPTION
The 2305 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
S
G
D
GENERAL FEATURES
V
DS
= -20V,I
D
= -4.1A
R
DS(ON)
<75mΩ @ V
GS
=-2.5V
R
DS(ON)
< 52mΩ @ V
GS
=-4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●PWM
applications
●Load
switch
●Power
management
SOT-23 top view
Package Marking And Ordering Information
Device Marking
2305
Device
2305
Device Package
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current -Continuous
I
D
Drain Current -Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
-20
±8
-4.1
-15
1.7
-55 To 150
Unit
V
V
A
A
W
74
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=-250μA
V
DS
=-20V,V
GS
=0V
Min
-20
-
Typ
-21
-
Max
-
-1
Unit
V
μA
ht
t
p
:
//
Revision:20170301-P1
www.lgesemi
.c
o
m
m ail:lge@lgesemi.com
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