LGE3400
N-Channel
30V(D-S) MOSFET
DESCRIPTION
The 3400 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
D
G
GENERAL FEATURES
V
DSS
30V
S
Schematic diagram
@ 4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ)
R
DS(ON)
31
m
Ω
R
DS(ON)
45
m
Ω
R
DS(ON)
28
m
Ω
I
D
5.8
A
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Marking and pin Assignment
Application
●
PWM applications
●Load
switch
●Power
management
SOT-23
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
I
D
Drain Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
30
±12
5.8
30
1.4
-55 To 150
Unit
V
V
A
A
W
℃
1.0
℃
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=250μA
Min
30
Typ
33
Max
-
Unit
V
Revision:20170701-P1
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LGE3400
N-Channel
30V(D-S) MOSFET
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
V
DS
=30V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=2.5V, I
D
=4A
V
GS
=4.5V, I
D
=2.9A
V
GS
=10V, I
D
=2.9A
V
DS
=5V,I
D
=2.9A
-
-
0.7
-
-
-
10
-
-
-
-
-
-
0.9
1
±100
1.4
μA
nA
V
mΩ
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
45
31
28
-
623
99
77
3.3
4.8
26
4
9.5
1.5
3
0.75
-
5
0
4
0
35
-
-
-
-
-
-
-
-
-
-
-
1.2
2.9
V
DS
=15V,V
GS
=0V,
F=1.0MHz
V
DD
=15V,I
D
=2.9A
V
GS
=10V,R
GEN
=3Ω
-
-
-
-
-
-
-
-
V
DS
=15V,I
D
=5.8A,
V
GS
=4.5V
V
GS
=0V,I
S
=2.9A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Revision:20170701-P1
ht
t
p
:
//
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
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