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MT5004T

Description
Three-phase rectifier bridge, 400V, 50V, 500A, 1.2V, 25A, 10uA
CategoryAnalog mixed-signal IC    Three-phase rectifier bridge   
File Size1MB,3 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

MT5004T Overview

Three-phase rectifier bridge, 400V, 50V, 500A, 1.2V, 25A, 10uA

MT5004T Parametric

Parameter NameAttribute value
PackageMT
Maximum recurrent peak reverse voltage400
IAV(V)50
Peak forward surge current500
Maximum instantaneous forward voltage1.2
Maximum average forward rectified current25
Maximum reverse current10
TJ(℃)-55-150
MT5004T THRU MT5016T
Three Phase Bridge Rectifiers
Features
● UL recognition, file #E230084
● Glass passivated chip
● High surge current capability
● Low thermal resistance
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
General purpose use in AC/DC bridge full wave
rectification for power supply, home appliances, office
equipment, industrial automation applications.
Mechanical Data
Package:
MT
Molding compound meets UL 94 V-0
flammability rating, RoHS-compliant
Terminals:
Tin plated leads, solderable
per J-STD-002 and JESD22-B102
Maximum Ratings
(Ta=25℃ Unless otherwise specified)
PARAMETER
Device marking code
Repetitive Peak Reverse Voltage
Average Rectified Output Current
@60Hz sine wave, R-load, With
heatsink, Tc=55℃
Surge(Non-repetitive)Forward
Current
@60Hz Half- sine Wave, 1 cycle,
Ta=25℃
Current Squared Time
@1ms≤t≤8.3ms Tj=25℃, Rating of
per diode
Storage Temperature
Junction Temperature
Dielectric Strength, Terminals to
case, AC 1 minute
Mounting Torque
VRRM
IO
V
A
SYMBOL UNIT
MT5004T
MT5004T
400
MT506T 
MT5006T
600
MT5008T
MT5008T
800
MT5010T
MT5010T
1000
MT5012T 
MT5012T 
1200
MT5014T
MT5014T
1400
MT5016T
MT5016T
1600
50
IFSM
A
500
I
2
t
Tstg
Tj
Vdis
TOR
AS
KV
kg·cm
2
1040
-55~+150
-55~+150
2.5
10
Electrical Characteristics
(Ta=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum DC reverse current at
rated DC blocking voltage per diode
SYMBOL UNIT
VFM
IRRM
V
TEST
CONDITIONS
IFM=25A
MT5004T MT5006T MT5008T MT5010T  MT5012T  MT5014T MT5016T
1.2
10
μA VRM=VRRM
Thermal Characteristics
(Ta=25℃ Unless otherwise specified)
PARAMETER
Thermal
Resistance
Between junction and
case, With heatsink
SYMBOL
R
θJ-C
UNIT
℃/W
MT5004T
MT5006T
MT5008T
MT5010T
0.88
MT5012T 
MT5014T
MT5016T
Revision:20170701-P1
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www.lgesem i
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mail:lge@lgesemi.com

MT5004T Related Products

MT5004T VJ2220A122KFXAJ2MP MT5006T MT5008T MT5010T MT5014T MT5016T
Description Three-phase rectifier bridge, 400V, 50V, 500A, 1.2V, 25A, 10uA Ceramic Capacitor, Multilayer, Ceramic, 25V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.0012uF, 2220, Three-phase rectifier bridge, 600V, 50V, 500A, 1.2V, 25A, 10uA Three-phase rectifier bridge, 800V, 50V, 500A, 1.2V, 25A, 10uA Three-phase rectifier bridge, 1000V, 50V, 500A, 1.2V, 25A, 10uA Three-phase rectifier bridge, 1400V, 50V, 500A, 1.2V, 25A, 10uA Three-phase rectifier bridge, 1600V, 50V, 500A, 1.2V, 25A, 10uA
Package MT - MT MT MT MT MT
Maximum recurrent peak reverse voltage 400 - 600 800 1000 1400 1600
IAV(V) 50 - 50 50 50 50 50
Peak forward surge current 500 - 500 500 500 500 500
Maximum instantaneous forward voltage 1.2 - 1.2 1.2 1.2 1.2 1.2
Maximum average forward rectified current 25 - 25 25 25 25 25
Maximum reverse current 10 - 10 10 10 10 10
TJ(℃) -55-150 - -55-150 -55-150 -55-150 -55-150 -55-150

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