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BCW30

Description
PNP general purpose transistors
CategoryDiscrete semiconductor    The transistor   
File Size45KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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PNP general purpose transistors

BCW30 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)215
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCW29; BCW30
PNP general purpose transistors
Product specification
Supersedes data of 1997 Sep 03
1999 Apr 13

BCW30 Related Products

BCW30 BCW29
Description PNP general purpose transistors PNP general purpose transistors
Is it Rohs certified? conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow
Maximum collector current (IC) 0.1 A 0.1 A
Configuration Single Single
Minimum DC current gain (hFE) 215 120
JESD-609 code e3 e3
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)

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