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2N4093UBE3

Description
Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET
CategoryDiscrete semiconductor    The transistor   
File Size49KB,2 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

2N4093UBE3 Overview

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET

2N4093UBE3 Parametric

Parameter NameAttribute value
MakerMicrochip
package instructionSURFACE MOUNT PACKAGE-3
Reach Compliance Codecompli
ECCN codeEAR99
TECHNICAL DATA
N-CHANNEL J-FET
Qualified per MIL-PRF-19500/431
Devices
2N4091
2N4091UB
2N4092
2N4092UB
2N4093
2N4093UB
Qualified Level
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25
0
C unless otherwise noted)
Parameters / Test Conditions
Gate-Source Voltage
Drain-Source Voltage
Drain-Gate Voltage
Gate Current
Power Dissipation
(1)
Operating Junction
Operating Storage Temperature Range
(1) Derate linearly 2.4 mW/
0
C for T
A
> 25
0
C.
Symbol
V
GS
V
DS
V
DG
I
G
P
T
T
j
T
stg
Value
-40
40
40
10
0.36
-65 to +175
-65 to +200
Units
V
V
V
mAdc
W
0
C
0
C
T
A
= +25
0
C
TO-18*
(TO-206AA)
Surface Mount
(UB version)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= +25
0
C unless otherwise noted)
PARAMETERS / TEST CONDITIONS
Symbol
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= -1.0
µAdc
Gate Reverse Current
V
DS
= 0, V
GS
= -20 Vdc
Drain Current
V
GS
= -12, V
DS
= 20 Vdc
V
GS
= -8.0, V
DS
= 20 Vdc
V
GS
= -6.0, V
DS
= 20 Vdc
Drain Current
V
GS
= 0, V
DS
= 20 Vdc
V
(BR)GSS
I
GSS
2N4091
2N4092
2N4093
2N4091
2N4092
2N4093
Min.
-40
Max.
Units
Vdc
-0.1
ηA
I
D(off)
0.1
ηA
I
DSS
30
15
8.0
mA
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
022802
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