MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW29LT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
BCW29LT1
BCW30LT1
3
1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
–32
–32
–5.0
–100
Unit
Vdc
Vdc
Vdc
mAdc
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
θJA
PD
556
300
2.4
R
θJA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –2.0 mAdc, IE = 0)
Collector–Emitter Breakdown Voltage
(IC = –100
µAdc,
VEB = 0)
Collector–Base Breakdown Voltage
(IC = –10
µAdc,
IC = 0)
Emitter–Base Breakdown Voltage
(IE = –10
µAdc,
IC = 0)
Collector Cutoff Current
(VCB = –32 Vdc, IE = 0)
(VCB = –32 Vdc, IE = 0, TA = 100°C)
1. FR– 5 = 1.0
0.75
2. Alumina = 0.4 0.3
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
—
—
–100
–10
nAdc
µAdc
–32
–32
–32
–5.0
—
—
—
—
Vdc
Vdc
Vdc
Vdc
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
BCW29LT1 BCW30LT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
hFE
BCW29
BCW30
VCE(sat)
—
VBE(on)
–0.6
–0.75
–0.3
Vdc
120
215
260
500
—
—
Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(IE = 0, VCB = –10 Vdc, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
Cobo
—
NF
—
10
7.0
dB
pF
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BCW29LT1 BCW30LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = – 5.0 Vdc, TA = 25°C)
10
7.0
en, NOISE VOLTAGE (nV)
5.0
IC = 10
µA
30
µA
3.0
2.0
1.0 mA
100
µA
300
µA
BANDWIDTH = 1.0 Hz
RS
≈
0
In, NOISE CURRENT (pA)
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
1.0
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10 k
0.1
10
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
300
µA
100
µA
30
µA
10
µA
IC = 1.0 mA
BANDWIDTH = 1.0 Hz
RS
≈ ∞
Figure 1. Noise Voltage
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
500 700 1.0 k
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
500 700 1.0 k
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
RS , SOURCE RESISTANCE (OHMS)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
10 Hz to 15.7 kHz
Noise Figure is Defined as:
NF
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200 300
500 700 1.0 k
IC, COLLECTOR CURRENT (µA)
+
20 log10
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10–23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
Figure 5. Wideband
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BCW29LT1 BCW30LT1
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125°C
25°C
h FE, DC CURRENT GAIN
200
– 55°C
100
80
60
40
0.003 0.005
BCW29LT1
VCE = 1.0 V
VCE = 10 V
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)
3.0
5.0 7.0
10
20
30
50 70 100
Figure 6. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
IC, COLLECTOR CURRENT (mA)
TA = 25°C
BCW29LT1
0.8
IC = 1.0 mA
10 mA
50 mA
100 mA
100
TA = 25°C
PULSE WIDTH = 300
µs
80 DUTY CYCLE
≤
2.0%
300
µA
60
IB = 400
µA
350
µA
250
µA
200
µA
150
µA
0.6
0.4
40
100
µA
50
µA
0.2
20
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
0
5.0 10
20
0
5.0
10
15
20
25
30
35
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
40
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
TJ = 25°C
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.1
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
50
100
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
*APPLIES for IC/IB
≤
hFE/2
0.8
*
q
VC for VCE(sat)
0
– 55°C to 25°C
0.8
25°C to 125°C
1.6
25°C to 125°C
q
VB for VBE
0.2
– 55°C to 25°C
2.4
0.1
0.5
1.0 2.0
5.0
10 20
IC, COLLECTOR CURRENT (mA)
50
100
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BCW29LT1 BCW30LT1
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
100
70
50
30
20
td @ VBE(off) = 0.5 V
10
7.0
5.0
1.0
tr
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
t, TIME (ns)
1000
700
500
300
200
100
70
50
30
20
10
–1.0
ts
VCC = – 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t, TIME (ns)
tf
2.0
3.0
20 30
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
50 70
100
– 2.0 – 3.0 – 5.0 – 7.0 –10
– 20 – 30
IC, COLLECTOR CURRENT (mA)
– 50 – 70 –100
Figure 11. Turn–On Time
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 12. Turn–Off Time
500
TJ = 25°C
300
200
VCE = 20 V
5.0 V
C, CAPACITANCE (pF)
10
TJ = 25°C
7.0
Cib
5.0
3.0
2.0
Cob
100
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Current–Gain — Bandwidth Product
Figure 14. Capacitance
20
10
hie , INPUT IMPEDANCE (k
Ω
)
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
100
BCW29LT1
hfe
≈
200
@ IC = –1.0 mA
hoe, OUTPUT ADMITTANCE (
m
mhos)
VCE = –10 Vdc
f = 1.0 kHz
TA = 25°C
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
100
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
BCW29LT1
hfe
≈
200
@ IC = 1.0 mA
Figure 15. Input Impedance
Figure 16. Output Admittance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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