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SML3530BN

Description
18.5A, 350V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
CategoryDiscrete semiconductor    The transistor   
File Size573KB,2 Pages
ManufacturerSEMELAB
Download Datasheet Parametric View All

SML3530BN Overview

18.5A, 350V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

SML3530BN Parametric

Parameter NameAttribute value
MakerSEMELAB
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage350 V
Maximum drain current (ID)18.5 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)74 A
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

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