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520301005R

Description
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257
CategoryDiscrete semiconductor    The transistor   
File Size606KB,18 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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520301005R Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257

520301005R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum collector current (IC)5 A
Collector-based maximum capacity250 pF
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)35
JEDEC-95 codeTO-257
JESD-30 codeS-XSFM-P3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment3.3 W
Maximum power dissipation(Abs)35 W
GuidelineEUROPEAN SPACE AGENCY; RH-100K Rad(Si)
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Transistor component materialsSILICON
Maximum off time (toff)1300 ns
Maximum opening time (tons)500 ns
VCEsat-Max1.5 V
2N5154HR
Hi-Rel NPN bipolar transistor 80 V, 5 A
Datasheet
-
production data
Features
V
CEO
80 V
5A
> 70
- 65 °C to + 200 °C
TO-39
I
C
(max)
TO-257
H
FE
at 10 V, 150 mA
Operating temperature range
Hi-Rel NPN bipolar transistor
Linear gain characteristics
SMD.5
ESCC qualified
European preferred part list - EPPL
Figure 1. Internal schematic diagram
Radiation level: lot specific total dose contact
marketing for specified level
Description
The 2N5154HR is a silicon planar epitaxial NPN
transistor in TO-39, TO-257 and SMD.5
packages. It is specifically designed for
aerospace Hi-Rel applications and ESCC
qualified according to the 5203/010 specification.
In case of conflict between this datasheet and
ESCC detailed specification, the latter prevails.
Base and Emitter are inverted for
2N5154RSRHRx and 2N5154SRHRx series
AM3128V1_n
Table 1. Device summary
Order code
2N5154HRx
TO-39
2N5154RHRx
2N5154ESYHRx
TO-257
2N5154RESYHRx
ESCC
2N5154RSHRx
2N5154SHRx
SMD.5
2N5154RSRHRx
2N5154SRHRx
May 2016
This is information on a product in full production.
Quality level
Agency
specification
Package
Other features
-
100 krad ESCC LDR
-
100 krad ESCC LDR
EPPL
5203/010
100 krad LDR, emitter on pin 1
Emitter on pin 1
100 krad LDR, emitter on pin 2
Emitter on pin 2
DocID15387 Rev 9
Yes
1/18
www.st.com

520301005R Related Products

520301005R 520301006R
Description Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257 Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Is it Rohs certified? conform to conform to
Maker STMicroelectronics STMicroelectronics
Reach Compliance Code compli compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 5 A 5 A
Collector-emitter maximum voltage 80 V 80 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 35 40
JESD-30 code S-XSFM-P3 R-XBCC-N3
Number of components 1 1
Number of terminals 3 3
Minimum operating temperature -65 °C -65 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape SQUARE RECTANGULAR
Package form FLANGE MOUNT CHIP CARRIER
Polarity/channel type NPN NPN
Guideline EUROPEAN SPACE AGENCY; RH-100K Rad(Si) EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)
surface mount NO YES
Terminal form PIN/PEG NO LEAD
Terminal location SINGLE BOTTOM
Transistor component materials SILICON SILICON
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