UNISONIC TECHNOLOGIES CO., LTD
12N50K-MT
12A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
12N50K-MT
is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC
12N50K-MT
is generally applied in high efficiency
switch mode power supplies, active power factor correction and
electronic lamp ballasts based on half bridge topology.
FEATURES
* R
DS(ON)
< 0.52
Ω
@ V
GS
= 10 V, I
D
= 6.0 A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
12N50KL-TA3-T
12N50KG-TA3-T
12N50KL-TF1-T
12N50KG-TF1-T
12N50KL-TF2-T
12N50KG-TF2-T
12N50KL-TF3-T
12N50KG-TF3-T
12N50KL-TQ2-T
12N50KG-TQ2-T
12N50KL-TQ2-R
12N50KG-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 9
QW-R502-B26.I
12N50K-MT
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 9
QW-R502-B26.I
12N50K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
12 (Note 2)
A
Drain Current
48 (Note 2)
A
Pulsed (Note 3)
I
DM
Avalanche Current (Note 3)
I
AR
12
A
Avalanche Energy
Single Pulsed (Note 4)
E
AS
600
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
3.5
V/ns
TO-220/TO-263
200
W
Power Dissipation
P
D
TO-220F
50
W
TO-220F1/TO-220F2
54
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L =8.33mH, I
AS
= 12A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
5. I
SD
≤
12A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.625
2.5
2.31
UNIT
°С/W
°С/W
°С/W
°С/W
Junction to Ambient
Junction to Case
TO-220/TO-263
TO-220F
TO-220F1/TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 9
QW-R502-B26.I
12N50K-MT
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=500V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=6.0A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=300V, I
D
=12A
Gate to Source Charge
Q
GS
I
G
=1mA (Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=12A, V
GS
=0V
Reverse Recovery Time
t
rr
I
S
=12A, V
GS
=0V
di/dt=100A/μs (Note 1)
Reverse Recovery Charge
Q
rr
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%.
2. Essentially independent of operating temperature.
Power MOSFET
MIN
500
10
+100
-100
2.0
0.39
1900
200
9.3
38
13
7
75
125
190
125
12
48
1.5
400
4.3
4.0
0.52
TYP MAX UNIT
V
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 9
QW-R502-B26.I
12N50K-MT
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 9
QW-R502-B26.I
京公网安备 11010802033920号
EEWORLD
