UNISONIC TECHNOLOGIES CO., LTD
UT2N10
Preliminary
Power MOSFET
2 Amps,100 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
UT2N10
is N-Channel enhancement mode silicon gate
power FET.it uses a special gate oxide designed to provide full rated
conductance at gate biases through 3V ~ 5V and facilitate true on-off
power control directly from logic circuit supply voltages.
The UTC
UT2N10
is universally applied in logic level (5V) driving
sources, such as automotive switching, solenoid drivers and
programmable controllers.
FEATURES
* R
DS(ON)
= 1.050Ω
* Design Optimized for 5V Gate Drives
* Can be Driven Directly from QMOS, NMOS, TTL Circuits
* Compatible with Automotive Drive Requirements
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
SYMBOL
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QW-R502-511.d
UT2N10
ORDERING INFORMATION
Preliminary
Power MOSFET
Ordering Number
Lead Free
Halogen Free
UT2N10L-AA3-R
UT2N10G-AA3-R
UT2N10L-TN3-R
UT2N10G-TN3-R
UT2N10L-T92-B
UT2N10G-T92-B
UT2N10L-T92-K
UT2N10G-T92-K
UT2N10L-T9N-B
UT2N10G-T9N-B
UT2N10L-T9N-K
UT2N10G-T9N-K
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
SOT-223
TO-252
TO-92
TO-92
TO-92NL
TO-92NL
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Box
Bulk
MARKING INFORMATION
PACKAGE
MARKING
SOT-223
TO-252
TO-92
TO-92NL
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QW-R502-511.d
UT2N10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 1)
V
DSS
100
V
Gate-Source Voltage
V
GSS
±10
V
Drain-Gate Voltage (R
GS
=1MΩ) (Note 1)
V
DGR
100
V
Continuous
I
D
2
A
Drain Current
Pulsed (Note 3)
I
DM
5
A
SOT-223
1
W
Power Dissipation
TO-252
P
D
25
W
TO-92/ TO-92NL
3
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Note:
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
,
V
GS
= 0V, T
C
= 125°C
V
GS
=+10V, V
DS
=0V
V
GS
=-10V, V
DS
=0V
MIN TYP MAX UNIT
100
1.0
25
+100
-100
1.0
2.5
2.1
1.050
200
80
35
5
10
15
25
20
25
45
45
25
1.4
100
µA
nA
nA
V
V
Ω
pF
pF
pF
°C/W
ns
ns
ns
ns
V
ns
V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Drain-Source On Voltage (Note 2)
V
DS(ON)
V
GS
=5V, I
D
=2A
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=5V, I
D
=2A
(Note 2)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
Thermal Resistance Junction to Case
R
θJC
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=50V, I
D
=2A, R
G
=6.25Ω,
R
L
=25
Ω,
V
GS
=5V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
SD
=2A
(Note 2)
Body Diode Reverse Recovery Time
t
RR
I
SD
=2A, dI
SD
/dt=50A/µs
Note: 1. T
J
= 25°C ~ 125°C.
2. Pulse test: pulse width≤300ms, duty cycle≤2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-511.d
UT2N10
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
t
on
t
d(on)
t
r
R
G
R
L
+
V
GS
OUT
V
GS
0
10%
50%
-
V
DS
90%
t
OFF
t
d(OFF)
t
f
90%
V
DD
0
10%
90%
10%
50%
Pluse width
Switching Time Test Circuit
Resistive Switching Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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