UNISONIC TECHNOLOGIES CO., LTD
UT32N10
32A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
UT32N10
is a N-channel enhancement MOSFET
using UTC’s advanced technology to provide the customers with
perfect R
DS(ON)
and high switching speed.
The UTC
UT32N10
is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50
watts, etc.
Power MOSFET
FEATURES
* R
DS(ON)
≤
18mΩ @ V
GS
=10V, I
D
=16A
R
DS(ON)
≤
25mΩ @ V
GS
=4.5V, I
D
=16A
* High Switching Speed
* Simple drive requirement
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT32N10L-TN3-R
UT32N10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
MARKING
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QW-R209-327.A
UT32N10
ABSOLUTE MAXIMUM RATINGS
(
T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
100
V
Gate-Source Voltage
V
GSS
±20
V
Continuous
I
D
32
A
Drain Current
Pulsed (Note 2)
I
DM
64
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
423
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.2
V/ns
Power Dissipation
P
D
50
W
Junction Temperature
T
J
+150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, I
AS
=9.2A, V
DD
=50V, R
G
=25Ω, Starting T
J
= 25°C
4. I
SD
≤30A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL CHARACTERISTICS
SYMBOL
RATINGS
Junction to Ambient
θ
JA
110
Junction to Case
θ
JC
2.5 (Note)
Note: Device mounted on FR-4 substrate P
C
board, 2oz copper, with 1inch square copper plate.
PARAMETER
UNIT
°C/W
°C/W
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QW-R209-327.A
UT32N10
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain to Source On-state Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=250μA
V
DS
=100V,V
GS
=0V
V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=16A
V
GS
=4.5V, I
D
=16A
Power MOSFET
MIN
100
TYP MAX UNIT
V
µA
nA
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
32
64
1.4
58
108
A
A
V
ns
nC
1
±100
1.0
3.0
18
25
3060
280
245
81
8
21
14
21
59
27
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Q
G
V
DS
=80V, V
GS
=10V, I
D
=32A,
Gate Source Charge
Q
GS
I
G
=1mA (Note 1, 2)
Gate Drain Charge
Q
GD
Turn-ON Delay Time (Note 1)
t
D(ON)
V
DD
=50V, V
GS
=10V, I
D
=32A,
Turn-ON Rise Time
t
R
R
G
=25Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Drain-Source Diode Forward Voltage (Note 1)
V
SD
I
S
=32A, V
GS
=0V
Reverse Recovery Time (Note 1)
t
rr
I
S
=32A,V
GS
=0V, dI/dt=100A/µs
Reverse Recovery Charge
Q
rr
Notes: 1. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%.
2. Essentially independent of operating ambient temperature.
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www.unisonic.com.tw
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QW-R209-327.A
UT32N10
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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QW-R209-327.A
UT32N10
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R209-327.A
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