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IN4935

Description
1 A, 50 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size765KB,1 Pages
ManufacturerETC1
Download Datasheet Parametric Compare View All

IN4935 Overview

1 A, 50 V, SILICON, SIGNAL DIODE

IN4935 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionHERMETIC SEALED PACKAGE-2
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsGlass
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.2000 us
Maximum repetitive peak reverse voltage50 V
Maximum average forward current1 A

IN4935 Related Products

IN4935 1N4933 1N4936 IN4933 IN4934 IN4936
Description 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE
Number of terminals 2 2 - 2 2 2
Number of components 1 1 - 1 1 1
Processing package description HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2 - HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2
state DISCONTINUED DISCONTINUED - DISCONTINUED DISCONTINUED DISCONTINUED
packaging shape round round - round round round
Package Size LONG FORM LONG FORM - LONG FORM LONG FORM LONG FORM
Terminal form Wire Wire - Wire Wire Wire
Terminal location AXIAL AXIAL - AXIAL AXIAL AXIAL
Packaging Materials Glass Glass - Glass Glass Glass
structure single single - single single single
Shell connection isolation isolation - isolation isolation isolation
Diode component materials silicon silicon - silicon silicon silicon
Diode type Signal diode Signal diode - Signal diode Signal diode Signal diode
Maximum reverse recovery time 0.2000 us 0.2000 us - 0.2000 us 0.2000 us 0.2000 us
Maximum repetitive peak reverse voltage 50 V 50 V - 50 V 50 V 50 V
Maximum average forward current 1 A 1 A - 1 A 1 A 1 A

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