PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
INA6005AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
0.65
DESCRIPTION
INA6005AC1 is a silicon PNP transistor.
It is designed with high voltage.
2.8
1.5
0.65
UNIT:mm
2.8
1.90
0.95 0.95
・Super
mini package for easy mounting
・High
voltage V
CEO
=-400V
①
②
③
APPLICATION
DC/DC convertor, High voltage switching
1.1
0.8
0.13
0½0.1
Terminal Connector
①:Base
②:Emitter
③:Collector
JEITA:SC-59
JEDEC: Similar to TO-236
MAXIMUM RATING(Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
-400
-7
-400
-100
200
+150
-55½+150
UNIT
V
V
V
mA
mW
℃
℃
MARKING
Type Name
P
C
T
j
T
stg
ALA
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
½
FE
V
CE(sat)
f
T
Cob
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
TEST CONDITIONS
I
C
=-50μA,I
E
=0mA
I
E
=-50μA,I
C
=0mA
I
C
=-1mA,R
BE
=∞
V
CB
=-400V,I
E
=0mA
V
EB
=-6V,I
C
=0mA
V
CE
=-10V,I
C
=-10mA
I
C
=-20mA,I
B
=-2mA
V
CE
=-20V,I
E
=10mA,f=100MHz
V
CB
=-10V,I
E
=0mA,f=1MHz
LIMITS
MIN
TYP
MAX
-400
-
-
-7
-
-
-400
-
-
-
-
-1
-
-
-1
82
-
200
-
-
-0.6
-
65
-
-
5.5
-
UNIT
V
V
V
μA
μA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
0.4
FEATURE
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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Mar.2013