PRELIMINARY
Notice : This is not a final specification.
Some parametric subject to change.
<SMALL-SIGNAL TRANSISTOR>
INC6002AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN TRANSISTOR
DESCLIPTION
INC6002AC1 is a silicon NPN transistor.
It is designed with high voltage.
OUTLINE DRAWING
2.8
0.65
1.5
0.65
Unit:mm
0.95
FEATURE
2.8
・Super mini package for easy mounting.
・Hige voltage V
CEO
=300V
1.9
(1)
(3)
0.95
(2)
APPLICATION
DC/DC convertor, High voltage switching
0.8
0.13
0∼0.1
1.1
TERMINAL CONNECTER
(1) BASE
(2) EMITTER
(3) COLLECTOR
JEITA:SC-59
JEDEC:Similar toTO-236
MAXIMUM RATINGS (Ta=25℃)
Symbol
V
CBO
V
EBO
V
CEO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Ratings
300
7
300
50
150
150
-55∼+150
Unit
V
V
V
mA
mW
℃
℃
MARKING
4W
ELECTRIC CHARACTERISTICS (Ta=25℃)
Symbol
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Gain
Collector-Emitter Saturation Voltage
Gain Bandwidth Product
Collector Output Capacitance
Test conditions
I
C
=50µA,I
E
=0
I
E
=50µA,I
C
=0
I
C
=1mA,R
BE
=∞
V
CB
=300V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=10V,I
C
=1mA
I
C
=10mA,I
B
=1mA
V
CE
=10V,I
E
=-10mA
V
CB
=6V,I
E
=0,f=1MHz
Limits
Min
300
5
300
-
-
50
-
-
-
Typ
-
-
-
-
-
-
-
50
1.9
Max
-
-
-
0.5
0.5
305
1.0
-
-
Unit
V
V
V
µA
µA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
0.4
PRELIMINARY
Notice : This is not a final specification.
Some parametric subject to change.
<SMALL-SIGNAL TRANSISTOR>
INC6002AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN TRANSISTOR
TYPCAL CHARACTERISTICS
Common Emitter Output
50
Ta=25℃
2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
Common Emitter Transfer
100
Ta=25℃
VCE=10V
Collector Current : IC (mA)
40
Collector Current : IC (mA)
10
Ta=125℃
75℃
25℃
-25℃
1
30
20
0.2mA
0.1mA
10
IB=0.05mA
0
0
2
4
6
8
10
Collector-Emitter Voltage : VCE (V)
0.1
0
0.2
0.4
0.6
0.8
1
Base-Emitter Voltage : VBE (V)
hFE-IC
1000
Ta=25℃
VCE=10V
Collector-Emitter
Saturation Voltage : VCE(sat) (V)
DC Forward Current Gain : hFE
VCE(sat)-IC
10
Ta=25℃
IC/IB=10
Ta=125℃
75℃
100
25℃
-25℃
10
1
Ta=125℃
75℃
0.1
25℃
-25℃
1
0.1
1
10
100
Collector Current : IC (mA)
0.01
0.1
1
10
100
Collector Current : IC (mA)
fT-IE
100
Ta=25℃
VCE=30V
10V
6V
Collector Output Capacitance : Cob (pF)
Cob-VCB
100
Ta=25℃
Gain Bandwidth Product : fT (MHz)
10
10
1
-1
-10
Emitter Current : IE (mA)
-100
1
0.1
1
10
100
Collector-Base Voltage : VCB (V)
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
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herein.
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
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Oct.2012