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SMDJ110C-T7

Description
Trans Voltage Suppressor Diode
CategoryDiscrete semiconductor    diode   
File Size1MB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
Download Datasheet Parametric View All

SMDJ110C-T7 Overview

Trans Voltage Suppressor Diode

SMDJ110C-T7 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
Reach Compliance Code_compli
ECCN codeEAR99
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee3
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)260
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperature40
Transient Voltage Suppression Diodes
Surface Mount – 3000W > SMDJ series
SMDJ Series
Uni-directional
Bi-directional
Description
RoHS
The SMDJ series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• For surface mounted
applications in order to
optimize board space
• Low profile package
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
15kV(Air), 8kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2 (IEC801-2)
• EFT protection of data
lines in accordance with
IEC 61000-4-4 (IEC801-4)
• Built-in strain relief
V
BR
@T
J
= V
BR
@25°C × (1+
α
T
x (T
J
- 25))
(αT: Temperature Coefficient)
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25°C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25ºC by 10/1000µs Waveform
(Fig.2)(Note 1), (Note 2)
Power Dissipation on Infinite Heat
Sink at T
A
=50°C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
Only
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
R
uJL
R
uJA
Value
3000
6.5
300
3.5
-55 to 150
15
75
Unit
W
W
A
V
°C
°C/W
°C/W
• Glass passivated chip
junction
• 3000W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• Excellent clamping
capability
• Low incremental surge
resistance
• Typical I
R
less than 2µA
above 12V
• High temperature
soldering guaranteed:
260°C/40 seconds at
terminals
• Plastic package has
underwriters laboratory
flammability 94V-O
• Meet MSL level1, per
J-STD-020, LF maximum
peak of 260°C
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
Applications
TVS devices are ideal for the protection of I/O Interfaces,
V
CC
bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic applications.
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
A
= 25°C per Fig. 3.
2. Mounted on copper pad area of 0.31x0.31” (8.0 × 8.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
Functional Diagram
Additional Information
Bi-directional
Datasheet
Resources
Samples
Cathode
Uni-directional
Anode
© 2014 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/24/14

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