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IRFZ34STRRPBF

Description
Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size398KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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IRFZ34STRRPBF Overview

Power MOSFET

IRFZ34STRRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Samacsys DescriptiPower MOSFET
Avalanche Energy Efficiency Rating (Eas)200 mJ
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)88 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
46
11
22
Single
D
FEATURES
60
0.050
Advanced process technology
Surface mount
Low-profile through-hole (IRFZ34L, SiHFZ34L)
175 °C operating temperature
Fast switching
Material categorization: for definitions of
compliance
please
see
www.vishay.com/doc?99912
Available
Available
I
2
PAK
(TO-262)
D
2
PAK (TO-263)
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
G
G
D
S
G
D
S
S
N-Channel MOSFET
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
The through-hole version (IRFZ34L, SiHFZ34L) is available
for low-profile applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHFZ34S-GE3
IRFZ34SPbF
D
2
PAK (TO-263)
SiHFZ34STRL-GE3
IRFZ34STRLPbF
a
I
2
PAK (TO-262)
SiHFZ34L-GE3
IRFZ34LPbF
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
T
C
= 25 °C
T
A
= 25 °C
Current
a, e
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
60
± 20
30
21
120
0.59
200
88
3.7
4.5
-55 to +175
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, Starting T
J
= 25 °C, L = 260 μH, R
g
= 25
,
I
AS
= 30 A (see fig. 12).
c. I
SD
30 A, dI/dt
200 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. Uses IRFZ34, SiHFZ34 data and test conditions.
S15-1659-Rev. D, 20-Jul-15
Document Number: 90368
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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