〈SMALL-SIGNAL TRANSISTOR〉
ISB1035AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISB1035AS1 is a resin sealed silicon PNP epitaxial type
transistor. It is designed for low frequency power amplify
application.
Complementary with ISD1447AS1.
3.0
OUTLINE DRAWING
4.0
Unit：½½
FEATURE
●High collector current. I
CM
= 1.5A
●High gain band width product. fT= 100MHz typ
●High collecot dissipation. Pc= 600mW
●Excellent linearity of DC forward current gain.
14.0
13.0MIN
1.0
1.0
0.1
0.45
2.5
2.5
APPLICATION
Radio, tape recorder, small type stereo, etc.
Low frequency power amplify circuit with 2 to 3.5W output.
JEITA：
JEDEC：
2.5
①
②
③
TERMINAL CONNECTER
MAXIMUM RATINGS
（Ta=25℃）
.
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
c
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-30
-4
-25
-1
-1.5
600
+150
-55½+150
Unit
V
V
V
A
A
mW
℃
℃
①：EMITTER
②：COLLECTOR
③：BASE
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
V(
BR
)
CBO
V(
BR
)
EBO
V(
BR
)
CEO
I
CBO
I
EBO
hFE※
VCE(sat)
fT
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Test conditions
I
C
= -10μA , I
E
=0mA
I
E
= -10μA , I
C
=0mA
I
C
= -100μA , R
BE
= ∞
V
V
V
CB
EB
Limits
Min
-30
-4
-25
-
-
55
-
-
Typ
-
-
-
-
-
-
-
100
Max
-
-
-
-1
-1
300
-0.5
-
0.4
7.5MAX
Unit
V
V
V
μA
μA
-
V
MHz
C
D
90½180
E
150½300
= -25V , I
E
= 0mA
= -1V , I
C
= -500mA
= -2V , I
C
= 0mA
CE
I
C
= -500mA , I
B
= -25mA
V
CE
= -6V , I
E
= 10mA
※） It shows hFE classification in right table.
Item
hFE item
55½110
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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·
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customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
·
ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·
ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·
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materials.
·
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diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is
h
prohibited.
·
Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.
Apr.2012
Talking about work
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