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BDY20

Description
Bipolar Transistors;NPN;15A;60V;TO-3
CategoryDiscrete semiconductor   
File Size208KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet View All

BDY20 Overview

Bipolar Transistors;NPN;15A;60V;TO-3

isc
Silicon NPN Power Transistor
DESCRIPTION
·Excellent
Safe Operating Area
·DC
Current Gain
-h
FE
=20-70@I
C
= 4A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 1.1V(Max)@ I
C
= 4A
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for general-purpose switching and amplifier
applications
BDY20
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
100
60
7
15
7
115
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.52
UNIT
℃/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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Index Files: 129  353  626  2510  2598  3  8  13  51  53 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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