BCX68-25 datasheet, PDF - EEWORLD Datasheet

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BCX68-25: Description1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size145KB，4 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BCX68-25 Overview

1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BCX68-25 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JEDEC-95 code	TO-243
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1 W
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.5 V

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NPN Silicon AF Transistors

For general AF applications

High collector current

High current gain

Low collector-emitter saturation voltage

Complementary type: BCX 69 (PNP)

BCX 68

Type

BCX 68

BCX 68-10

BCX 68-16

BCX 68-25

Marking

–

Ordering Code

(tape and reel)

Q62702-C1572

Q62702-C1864

Q62702-C1865

Q62702-C1866

Pin Configuration

Package

SOT-89

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current

Base current

Peak base current

Total power dissipation,

= 130 ˚C

Junction temperature

Storage temperature range

Thermal Resistance

Junction - ambient

Junction - soldering point

th JA

th JS

≤

Symbol

CE0

CB0

EB0

tot

stg

Values

100

200

150

– 65 … + 150

Unit

˚C

K/W

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm

40 mm

1.5 mm/6 cm

Cu.

Semiconductor Group

5.91

BCX68-25 Related Products

	BCX68-25	BCX68	BCX68-16	BCX68-10	Q62702-C1866	Q62702-C1865	Q62702-C1572
Description	1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
surface mount	YES	YES	YES	YES	Yes	Yes	Yes
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	-	-	-
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	-	-	-
Reach Compliance Code	unknow	unknow	unknow	unknow	-	-	-
ECCN code	EAR99	EAR99	EAR99	EAR99	-	-	-
Maximum collector current (IC)	1 A	1 A	1 A	1 A	-	-	-
Collector-emitter maximum voltage	20 V	20 V	20 V	20 V	-	-	-
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	-	-	-
Minimum DC current gain (hFE)	160	85	100	85	-	-	-
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	-	-	-
JESD-609 code	e0	e0	e0	e0	-	-	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	-	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	-	-
Polarity/channel type	NPN	NPN	NPN	NPN	-	-	-
Maximum power consumption environment	1 W	1 W	1 W	1 W	-	-	-
Maximum power dissipation(Abs)	1 W	0.8 W	1 W	1 W	-	-	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-	-
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	AMPLIFIER	AMPLIFIER	AMPLIFIER
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	-	-	-
VCEsat-Max	0.5 V	0.5 V	0.5 V	0.5 V	-	-	-

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